FDS6890A

FET, MOSFET Arrays Overview

The FDS6890A is a dual N-channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in an SOIC-8 surface-mount package. It features a 20V drain-source breakdown voltage and supports a continuous drain current of 7.5A. The device exhibits a low on-resistance of 13 milliohms at Vgs=4.5V. Gate characteristics include a threshold voltage of 500mV and a total gate charge of 32nC. Operating temperatures range from -55°C to +150°C junction temperature, with a power dissipation rating of 2W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single compact SOIC-8 package for space-constrained designs.
• Low on-resistance technology minimizes conduction losses in high-current applications.
• Logic-level gate drive capability allows direct interfacing with standard logic outputs.

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification
• Load switching circuits
• Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before placing orders. Ensure storage conditions adhere to moisture sensitivity level requirements.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within an SOIC-8 footprint. The 20V rating suits low-voltage systems. Evaluate thermal performance based on the 2W power dissipation limit and ambient operating conditions. Compare gate charge values against driver capabilities to ensure adequate switching speeds.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of silicon MOSFETs designed for efficiency and cost-effectiveness. It serves as a discrete solution for power switching tasks where integration density is prioritized. The dual configuration reduces board area compared to using two separate single-channel devices.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is rated at +/- 8V.

Is this device suitable for logic-level control?

Yes, it has a typical threshold voltage of 500mV, allowing it to be driven by standard logic levels.

What is the package type?

The FDS6890A is available in an 8-Lead SOIC (Small Outline Integrated Circuit) package.