FDS6892AZ

FET, MOSFET Arrays Overview

The FDS6892AZ is a dual N-channel logic level MOSFET manufactured by onsemi, utilizing the PowerTrench process. It features a maximum drain-source voltage of 20 V and a continuous drain current of 7.5 A at 25°C. The device offers an on-state resistance of 18 mΩ at VGS = 4.5 V and 24 mΩ at VGS = 2.5 V. Typical gate charge is 12 nC. Operating junction temperature ranges from -55°C to +150°C. Thermal resistance junction-to-ambient is 78°C/W on a 0.5 in² pad. The component is housed in an SO-8 package.

FET, MOSFET Arrays Feature Summary

• Logic level operation optimized for low-voltage battery applications
• PowerTrench technology ensures low on-state resistance with fast switching performance
• Dual configuration provides two independent N-channel devices in one package

FET, MOSFET Arrays Applications

• Low voltage power management circuits
• Battery powered equipment requiring efficient inline power loss reduction
• PWM controlled motor drivers

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or onsemi depending on acquisition date. Confirm RoHS compliance status through official documentation. Check datasheet revision history for potential parameter updates. Ensure ordering suffix matches required packaging specifications. Validate authenticity via authorized distribution channels.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel control within a compact SO-8 footprint. Evaluate thermal dissipation requirements against the specified junction-to-ambient resistance. Consider the logic level threshold for compatibility with standard microcontroller output voltages. Verify that the 20 V breakdown voltage exceeds the maximum circuit operating voltage.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family of MOSFETs designed for high efficiency. It serves as a dual-channel alternative to single-channel counterparts, saving board space. The product line emphasizes low RDS(ON) for improved power handling in portable electronics.

FET, MOSFET Arrays Replacement Considerations

Check for direct cross-reference part numbers from onsemi or Fairchild Semiconductor. Verify pinout compatibility and package dimensions before substitution. Compare electrical parameters such as RDS(ON) and VGS(th) to ensure functional equivalence.