FET, MOSFET Arrays FDS6894A product image

FDS6894A

  • Description:MOSFET 2N-CH 20V 8A 8SOIC
  • Series:PowerTrench®

SKU:39002bc4776f Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

FDS6894A is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 8A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS6894A

  • Description:MOSFET 2N-CH 20V 8A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:8A
  • Rds On (Max) @ Id, Vgs:17mOhm @ 8A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1676pF @ 10V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS6894A

FDS6894A

FET, MOSFET Arrays Overview

The FDS6894A is a dual N-Channel Logic Level MOSFET manufactured using the PowerTrench process. It features an SO-8 package with two independent channels. Key electrical parameters include a Drain-Source Voltage (VDSS) of 20 V and a continuous Drain Current (ID) of 8 A. The static Drain-Source On-Resistance (RDS(on)) is specified at 17 mΩ @ VGS = 4.5 V, 20 mΩ @ VGS = 2.5 V, and 30 mΩ @ VGS = 1.8 V. Total Gate Charge (Qg) is typically 17 nC. Operating junction temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Logic level gate drive capability optimized for low voltage applications
  • PowerTrench technology designed to minimize on-state resistance while maintaining switching performance
  • Dual channel configuration in a compact surface mount package

FET, MOSFET Arrays Applications

  • Low voltage battery powered systems
  • PWM controlled circuits requiring fast switching
  • Applications demanding low in-line power loss

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches the required SO-8 footprint. Ensure thermal management design accounts for the specified junction-to-ambient thermal resistance values under intended operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-Channel MOSFET with 20V rating and logic-level gate drive is required. Consider the 17 mΩ RDS(on) at 4.5V VGS for efficiency needs. Verify that the SO-8 package dimensions fit the target PCB layout constraints.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family of MOSFETs, originally developed by Fairchild Semiconductor. The product line focuses on optimizing the trade-off between conduction losses and switching speeds for low-voltage power applications.

FET, MOSFET Arrays Replacement Considerations

Check for cross-references within the same PowerTrench series or equivalent dual N-channel devices with matching 20V VDSS and SO-8 packaging. Verify pinout compatibility before substitution.

FDS6894AFDS6894A

Click on the inquiry