FDS6898A_NF40

FET, MOSFET Arrays Overview

The FDS6898A_NF40 is a dual N-Channel Logic Level MOSFET manufactured by onsemi, utilizing the PowerTrench process. It features a 20 V Drain-Source Voltage (VDSS) and a continuous Drain Current (ID) of 9.4 A. The device exhibits a low static Drain-Source On-Resistance (RDS(on)) of 14 mΩ at VGS = 4.5 V and 18 mΩ at VGS = 2.5 V. Total gate charge (Qg) is typically 16 nC. Operating junction temperature ranges from -55°C to +150°C, with a maximum power dissipation of 2 W for dual operation.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel configuration in an SO-8 package
• Logic level optimized for low voltage applications
• PowerTrench technology for minimized on-state resistance

FET, MOSFET Arrays Applications

• Low voltage battery powered systems
• PWM controlled circuits requiring fast switching
• Applications demanding low in-line power loss

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging or marking variations. Confirm RoHS compliance status through current manufacturer declarations. Ensure the component source matches the specified manufacturer to avoid counterfeit parts. Review absolute maximum ratings before integration into final designs.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-Channel logic-level switching within a compact SO-8 footprint. Evaluate thermal management requirements based on the 78 °C/W junction-to-ambient resistance. Consider the 20 V breakdown voltage limit when designing for higher voltage environments.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of MOSFETs designed for high performance and low RDS(on). Originally developed by Fairchild Semiconductor, the product line was acquired by onsemi. The datasheet revision indicates it is a finalized production specification.

FET, MOSFET Arrays Replacement Considerations

Check for direct equivalents such as the FDS6898AZ variant. Verify pinout compatibility and electrical parameter alignment before substituting other dual N-Channel MOSFETs.