FET, MOSFET Arrays FDS6900S product image

FDS6900S

$0.48
  • Description:MOSFET 2N-CH 30V 6.9A 8SOIC
  • Series:PowerTrench®

SKU:5fd19324b018 Category: Brand:

  
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FDS6900S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET 2N-CH 30V 6.9A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS6900S

  • Description:MOSFET 2N-CH 30V 6.9A 8SOIC
  • Series:PowerTrench®
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6.9A (Ta), 8.2A (Ta)
  • Rds On (Max) @ Id, Vgs:30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA, 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:11nC @ 5V, 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:771pF @ 15V, 1238pF @ 15V
  • Power - Max:900mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS6900S

FDS6900S

FET, MOSFET Arrays Overview

The FDS6900S is a dual N-channel PowerTrench MOSFET array in an 8-SOIC package. It features a 30V drain-source voltage rating and logic-level gate drive capability. The device supports continuous drain currents of 6.9A at 25°C with a maximum on-resistance of 30 milliohms at 10V gate drive. It operates within a junction temperature range of -55°C to 150°C and dissipates up to 900mW of power.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for space-efficient circuit designs
  • Logic-level gate drive compatibility for direct microcontroller interfacing
  • Low on-resistance characteristics for improved power efficiency

FET, MOSFET Arrays Applications

  • DC-DC converter synchronous rectification
  • Load switching applications
  • Power management circuits requiring dual channel control

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation, as Fairchild Semiconductor operations have transitioned to ON Semiconductor. Confirm RoHS3 compliance status and ensure the 8-SOIC package dimensions match the design footprint. Validate that the specific lot date codes meet project requirements before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET solution is required in a compact surface-mount package. The logic-level threshold allows for efficient driving from standard 5V or lower logic supplies. Ensure thermal management strategies account for the 900mW power dissipation limit under expected operating conditions.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family of MOSFETs, known for optimized performance in low-voltage applications. The FDS69 series provides integrated dual channels to reduce board space compared to discrete single-transistor implementations. It is designed for general-purpose switching tasks in consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Check for equivalents from ON Semiconductor, which acquired Fairchild's semiconductor business. Verify pinout compatibility and electrical parameter alignment before substituting.

FDS6900SFDS6900S
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