FDS6930B

FET, MOSFET Arrays Overview

The FDS6930B is a dual N-Channel Logic Level PowerTrench MOSFET manufactured by onsemi, utilizing advanced trench technology to minimize on-state resistance while maintaining superior switching performance. The device features a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 5.5 A. At a gate-source voltage (VGS) of 10 V, the maximum on-resistance (RDS(on)) is 38 mΩ, increasing to 50 mΩ at VGS = 4.5 V. Designed for low-voltage and battery-powered applications, it offers fast switching speeds and low gate charge to reduce in-line power loss.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel configuration within a single package for space-efficient circuit design
• Logic level gate drive capability allowing direct interface with standard logic outputs
• Advanced PowerTrench process technology optimized for extremely low on-resistance

FET, MOSFET Arrays Applications

• Low voltage battery-powered consumer electronics
• DC-DC converter circuits requiring low in-line power loss
• Load switch applications in portable devices

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully, as Fairchild Semiconductor was acquired by onsemi. Ensure the ordering part number matches the specific tape-and-reel or tube packaging requirements for your assembly line. Confirm RoHS compliance status through official datasheets or component traceability documents before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-Channel topology is required for synchronous rectification or high-side/low-side driving in compact designs. The 30 V rating suits 5 V and 12 V systems. Evaluate thermal management needs based on the 5.5 A current rating and the specific RDS(on) values at your operating VGS levels to ensure efficiency targets are met.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family of MOSFETs, known for balancing low conduction losses with fast switching characteristics. Originally developed by Fairchild Semiconductor, the product line continues under onsemi following the corporate acquisition. It serves as a discrete solution for power management in mobile and embedded systems where size and efficiency are critical constraints.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible replacements may include other dual N-Channel MOSFETs with similar 30 V ratings and comparable RDS(on) specifications. Verify that alternative parts meet the same logic-level gate drive requirements and thermal dissipation capabilities. Cross-reference package dimensions and electrical parameters to ensure functional equivalence in the existing circuit layout.