FDS6961A

FET, MOSFET Arrays Overview

The FDS6961A is a dual N-Channel Logic Level PowerTrench MOSFET manufactured by onsemi. It features a 30 V drain-source voltage rating and a continuous drain current of 3.5 A. The device achieves an on-state resistance (RDS(ON)) of 0.090 Ω at VGS = 10 V and 3.5 A, or 0.140 Ω at VGS = 4.5 V and 2.8 A. Key dynamic characteristics include a typical total gate charge (Qg) of 2.1 nC and a maximum junction-to-ambient thermal resistance (RθJA) of 78 °C/W on a 0.5 in² pad. The component operates within a temperature range of -55 °C to 150 °C.

FET, MOSFET Arrays Feature Summary

• Dual configuration with independent channels for space-efficient circuit design
• Logic level compatibility allowing direct drive from standard logic outputs
• PowerTrench technology optimized for low on-resistance and fast switching performance

FET, MOSFET Arrays Applications

• Low voltage battery powered applications requiring minimal in-line power loss
• DC-DC converter circuits utilizing fast switching capabilities
• Load switching systems where low on-state resistance reduces heat generation

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor products are now part of onsemi. Confirm the specific package variant matches the required footprint, as the datasheet lists SOT-23 SuperSOT-8, SOIC-16, SO-8, SOT-223 SuperSOT-6, and TO-263 options. Ensure the ordering suffix corresponds to the desired packaging format before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-Channel MOSFET is required for 30 V logic-level applications. The low RDS(ON) makes it suitable for high-efficiency power management. Consider the thermal resistance limits based on the PCB copper area available for heat dissipation. Verify that the gate charge requirements align with the driving circuit's capability for optimal switching speeds.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family of MOSFETs, designed using advanced trench process technology. It is engineered to minimize on-state resistance while maintaining superior switching performance. The dual-channel architecture allows for compact designs in applications demanding high power density and efficient current handling.

FET, MOSFET Arrays Replacement Considerations

Check for updated revisions from onsemi which may supersede older Fairchild documentation. Evaluate alternative dual N-Channel MOSFETs with similar 30 V ratings and comparable RDS(ON) values if pinout compatibility is not strictly required.