FDS6975

$1.76

Description：MOSFET 2P-CH 30V 6A 8SOIC
Series：PowerTrench®

SKU:df5a0b4eaff7 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

FDS6975 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 30V 6A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS6975

Description：MOSFET 2P-CH 30V 6A 8SOIC
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6A
Rds On (Max) @ Id, Vgs：32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：1540pF @ 15V
Power - Max：900mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDS6975

FDS6975

FET, MOSFET Arrays Overview

The FDS6975 is a dual P-channel PowerTrench MOSFET from onsemi, housed in an 8-pin SOIC surface-mount package. It features a -30V drain-source breakdown voltage and supports a continuous drain current of 6A. The device exhibits a low on-resistance of 32mΩ at VGS = -10V. Key electrical characteristics include a gate-source threshold voltage of 3V, a maximum gate-source voltage of ±20V, and a total gate charge of 20nC. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 2W.

FET, MOSFET Arrays Feature Summary

Dual P-Channel Configuration
Low On-Resistance Technology
Enhancement Mode Operation

FET, MOSFET Arrays Applications

Notebook computer load switching
Power management circuits
Battery charging circuits
DC/DC conversion systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the official datasheet to ensure compatibility with required thermal and mechanical specifications. Confirm that the component meets RoHS standards as indicated by manufacturer documentation. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual isolated P-channel switching in compact designs. Evaluate the 32mΩ on-resistance against thermal constraints to ensure adequate heat dissipation within the 2W power rating. Ensure the driving circuit can provide sufficient gate voltage swing relative to the 3V threshold for reliable enhancement mode operation.

FET, MOSFET Arrays Part Context

This device belongs to onsemi’s PowerTrench family of silicon MOSFETs. It is designed for high-efficiency power switching in portable electronics. The dual configuration allows for independent control of two channels within a single small-outline package, optimizing board space utilization for consumer and industrial power management solutions.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 30V voltage rating, 6A current capacity, and SOIC-8 package dimensions. Verify that alternative components maintain equivalent on-resistance and gate charge specifications for compatible performance.