FET, MOSFET Arrays FDS6982 product image

FDS6982

$1.48
  • Description:MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
  • Series:-

SKU:4f7cee42c9df Category: Brand:

  
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FDS6982 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS6982

  • Description:MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6.3A, 8.6A
  • Rds On (Max) @ Id, Vgs:28mOhm @ 6.3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:760pF @ 10V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS6982

FDS6982

FET, MOSFET Arrays Overview

The onsemi FDS6982 is a dual N-channel PowerTrench MOSFET in an SO-8 package. It integrates two distinct transistors: Q1 (high-side) rated at 6.3A and Q2 (low-side) rated at 8.6A, both with a 30V drain-source voltage. Q2 features a maximum RDS(on) of 0.020Ω at VGS=4.5V, while Q1 has a maximum RDS(on) of 0.035Ω at VGS=4.5V. The device operates within a junction temperature range of -55°C to +150°C and offers thermal resistance values of 78°C/W (junction-to-ambient) and 40°C/W (junction-to-case).

FET, MOSFET Arrays Feature Summary

  • Integrates two unique N-channel logic level MOSFETs into a single surface-mount package.
  • Optimized high-side switch (Q1) designed specifically for reduced switching losses.
  • Optimized low-side switch (Q2) engineered for minimal conduction losses below 20mΩ at VGS = 4.5V.

FET, MOSFET Arrays Applications

  • Battery powered synchronous DC:DC converters.
  • Embedded DC:DC conversion systems.
  • Notebook power supply peripheral voltage rails.

FET, MOSFET Arrays Procurement Notes

Verify the component status carefully as this part may be obsolete or discontinued by Fairchild Semiconductor. Confirm availability through authorized distributors or verify if a newer revision or equivalent replacement from onsemi is required for current production designs.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require replacing two discrete SO-8 MOSFETs with a single dual package. Ensure the application utilizes a gate drive voltage compatible with the specified thresholds, particularly noting the distinct performance characteristics between the high-side and low-side switches.

FET, MOSFET Arrays Part Context

Originally manufactured by Fairchild Semiconductor, this component belongs to the PowerTrench family. Following industry consolidation, onsemi now manages the product line. It serves as a specialized SyncFET solution tailored for notebook computers and battery-operated electronics requiring efficient synchronous rectification.

FET, MOSFET Arrays Replacement Considerations

Check for onsemi equivalents such as the FDS6982AS. Verify pinout compatibility and electrical parameters against the original datasheet specifications before substituting.

FET, MOSFET Arrays FAQ

What is the difference between Q1 and Q2 in the FDS6982?

Q1 is the high-side switch optimized for fast switching speed and lower gate charge, while Q2 is the low-side switch optimized for extremely low conduction resistance.

What is the maximum continuous drain current for each channel?

The maximum continuous drain current is 6.3 A for Q1 and 8.6 A for Q2.

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