FDS6984S

FET, MOSFET Arrays Overview

The FDS6984S is a dual N-channel PowerTrench SyncFET array in an SO-8 package, designed to replace two single MOSFETs and a Schottky diode. It integrates a high-side switch (Q1) optimized for low switching losses with a typical gate charge of 5 nC, and a low-side switch (Q2) optimized for conduction losses featuring an integrated SyncFET Schottky diode. Q2 provides an RDS(on) of 19 mΩ at VGS=10V with an 8.5A continuous drain current, while Q1 offers 40 mΩ at VGS=10V with a 5.5A rating. The device operates within a -55°C to +150°C junction temperature range.

FET, MOSFET Arrays Feature Summary

• Integrates a high-side switch optimized for low switching losses via reduced gate charge
• Features a low-side switch with an embedded SyncFET Schottky diode to minimize conduction losses
• Designed as a direct replacement for discrete MOSFET and Schottky diode combinations

FET, MOSFET Arrays Applications

• Synchronous DC/DC power supplies for notebook computers
• Peripheral voltage regulation for battery-powered electronic devices

FET, MOSFET Arrays Procurement Notes

Verify the component manufacturer and revision status before procurement, as Fairchild Semiconductor was acquired by onsemi. Confirm that the specific ordering suffix matches the required tape and reel quantity of 2500 units. Ensure the datasheet version aligns with design specifications to avoid discrepancies in electrical characteristics or thermal parameters during integration.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints prevent using discrete MOSFETs and Schottky diodes. The Q1 transistor is suitable for high-frequency switching applications due to its low gate charge, while Q2 handles heavy loads efficiently. Verify that the system's gate drive voltage supports the logic level requirements for optimal RDS(on) performance across the operating temperature range.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench and SyncFET product families from Fairchild Semiconductor. It represents a consolidation strategy for synchronous rectification, combining distinct functional elements into a single monolithic package to improve circuit density and reduce parasitic inductances associated with external interconnects.

FET, MOSFET Arrays Replacement Considerations

The FDS6680S is listed as a related part number in the datasheet marking section. Verify pinout compatibility and electrical parameter alignment if substituting with other dual MOSFET arrays.