FET, MOSFET Arrays FDS6986AS product image

FDS6986AS

$1.28
  • Description:MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC
  • Series:PowerTrench®, SyncFET™

SKU:1aa28153cc70 Category: Brand:

  
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FDS6986AS is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS6986AS

  • Description:MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC
  • Series:PowerTrench®, SyncFET™
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6.5A, 7.9A
  • Rds On (Max) @ Id, Vgs:29mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:720pF @ 10V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS6986AS

FDS6986AS

FET, MOSFET Arrays Overview

The FDS6986AS is a dual N-channel PowerTrench MOSFET array manufactured by onsemi. It features a 30V drain-source voltage rating and operates within a junction temperature range of -55°C to 150°C. The device delivers continuous drain currents of 6.5A and 7.9A at specific conditions, with a maximum power dissipation of 900mW in an 8-SOIC package. Key electrical parameters include a maximum gate threshold voltage of 3V at 250µA, a typical on-resistance of 29mΩ at 6.5A and 10V, a maximum gate charge of 17nC at 10V, and a maximum input capacitance of 720pF at 10V.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for space-efficient circuit designs
  • Logic level gate drive capability for direct microcontroller interfacing
  • Automotive-grade reliability compliant with AEC-Q101 standards

FET, MOSFET Arrays Applications

  • Automotive power management systems
  • Low-side switching applications
  • Battery protection circuits

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation, as historical records indicate Fairchild Semiconductor as the original producer before corporate restructuring. Confirm the RoHS compliance status and material composition declaration directly from official documentation. Ensure the ordering suffix matches the required packaging format, such as tape and reel or cut tape, to align with assembly requirements.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching. The logic-level gate threshold simplifies driver design compared to standard threshold devices. Evaluate the thermal performance against the 900mW dissipation limit and ensure the package footprint fits the PCB layout constraints of the 8-SOIC form factor.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench series, known for optimized on-resistance and gate charge characteristics. It is part of the broader SyncFET family designed for efficient power conversion. The product line emphasizes automotive durability and low conduction losses for modern electronic systems.

FET, MOSFET Arrays Replacement Considerations

Check for updated part numbers under the onsemi portfolio due to manufacturing transitions. Verify pin compatibility and electrical specifications if substituting with other 30V dual N-channel MOSFETs from different manufacturers.

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