FDS6986S

FET, MOSFET Arrays Overview

The FDS6986S is a dual N-channel PowerTrench MOSFET array manufactured by Fairchild Semiconductor. It features a 30V drain-source voltage rating and operates within a junction temperature range of -55°C to 150°C. The device provides continuous drain currents of 6.5A and 7.9A at 25°C, with a maximum power dissipation of 900mW. Key electrical characteristics include a gate threshold voltage of 3V at 250µA, a maximum gate charge of 17nC at 10V, and an input capacitance of 720pF at 10V. It utilizes logic-level gate drive technology and is housed in an 8-SOIC surface-mount package.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single compact surface-mount package
• Logic-level gate drive capability for efficient control with standard logic signals
• PowerTrench architecture designed for low on-resistance and high switching efficiency

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification
• Low-side switching applications
• Load switch circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official Fairchild documentation to confirm pinout and electrical tolerances. Ensure the component matches the required 8-SOIC footprint and thermal specifications for the target design. Cross-reference datasheets to validate performance parameters under intended operating conditions before integration.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel switching with a 30V voltage rating. The logic-level gate drive simplifies driver circuit requirements. Evaluate the 900mW power dissipation limit to ensure adequate thermal management within the 8-SOIC package constraints for the specific application current loads.

FET, MOSFET Arrays Part Context

This part belongs to the FDS69 series of discrete semiconductors from Fairchild Semiconductor. It is categorized as a MOSFET array within the broader PowerTrench family, which focuses on enhancing power conversion efficiency through optimized silicon structures and packaging solutions for modern electronic systems.

FET, MOSFET Arrays FAQ

What is the maximum gate threshold voltage specified for the FDS6986S?

The maximum gate threshold voltage is 3V when tested at a drain current of 250µA.

Does the FDS6986S include built-in body diodes?

Yes, as a dual N-channel MOSFET array, it includes intrinsic body diodes associated with each channel.