FDS8333C

$0.23

Description：MOSFET N/P-CH 30V 4.1A 8SOIC
Series：PowerTrench®

SKU:1b0048f04313 Category: FET, MOSFET Arrays Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

FDS8333C is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 30V 4.1A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS8333C

Description：MOSFET N/P-CH 30V 4.1A 8SOIC
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.1A, 3.4A
Rds On (Max) @ Id, Vgs：80mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：282pF @ 10V
Power - Max：900mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDS8333C

FDS8333C

FET, MOSFET Arrays Overview

The FDS8333C is a dual N and P-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. It utilizes an advanced trench process to minimize on-state resistance while maintaining superior switching performance. The device features a drain-source voltage of 30V for both channels. The N-channel (Q1) supports a continuous drain current of 4.1A with an RDS(on) of 80mΩ at VGS=10V, while the P-channel (Q2) supports 3.4A with an RDS(on) of 130mΩ at VGS=-10V. Packaged in an SO-8 surface mount format, it offers low gate charge and high power handling capability suitable for battery-powered applications.

FET, MOSFET Arrays Feature Summary

Dual N and P-channel configuration within a single package
Advanced PowerTrench technology for minimized on-state resistance
Low gate charge for fast switching performance
High power handling in a widely used surface mount package

FET, MOSFET Arrays Applications

Low voltage and battery powered applications
DC/DC converters
Load switches
LCD display inverters

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entity onsemi. Confirm the specific ordering suffix matches the required reel size and tape width specifications. Ensure the component marking aligns with the official datasheet documentation to prevent counterfeit substitution during acquisition.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints preclude larger packages like SO-8 or TSSOP-8 but higher power dissipation than smaller alternatives is needed. Evaluate thermal resistance requirements based on the specific copper pad area available on the PCB layout. Consider the gate threshold voltage characteristics for compatibility with the intended logic drive levels.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of MOSFETs designed for efficiency. It serves as a compact solution for applications requiring both N-channel and P-channel switching capabilities without occupying excessive board real estate. The design targets scenarios where minimizing inline power loss is critical alongside rapid switching speeds.