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FDS89161 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 100V 2.7A 8SOIC. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDS89161
- Description：MOSFET 2N-CH 100V 2.7A 8SOIC
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：2.7A
- Rds On (Max) @ Id, Vgs：105mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：210pF @ 50V
- Power - Max：1.6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDS89161
FET, MOSFET Arrays Overview
The FDS89161 is a P-channel PowerTrench MOSFET manufactured by onsemi. It features an 80V drain-source voltage rating and a continuous drain current of -25A at 25°C case temperature. The device utilizes advanced trench technology to achieve low on-resistance, specified as a maximum of 13 milliohms at a gate-source voltage of -10V. This component is housed in a compact DPAK surface-mount package, designed for efficient thermal performance and high-density circuit board layouts.
FET, MOSFET Arrays Feature Summary
- Advanced trench technology enables low on-resistance for improved efficiency
- High switching speed characteristics suitable for power management applications
- Robust avalanche energy rating ensures reliability under transient conditions
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Power distribution modules
- Load switch implementations
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against official onsemi documentation to confirm exact packaging configuration and compliance status. Ensure the component matches the required voltage and current ratings for the target application before procurement.
FET, MOSFET Arrays Selection Notes
Select this component when a P-channel solution with low Rds(on) is required for 48V or lower systems. Evaluate thermal dissipation requirements based on the DPAK package limitations and ensure the gate drive voltage aligns with the specified threshold for optimal conduction.
FET, MOSFET Arrays Part Context
This part belongs to onsemi's PowerTrench family of MOSFETs. The series focuses on combining low on-resistance with fast switching capabilities. The FDS89161 specifically addresses needs for medium-current applications requiring reliable performance in space-constrained designs.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics.
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