FDS8936A

FET, MOSFET Arrays Overview

The FDS8936A is a dual N-channel enhancement mode field effect transistor manufactured by Fairchild Semiconductor. It features a SOIC-8 surface mount package with two independent channels. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V and continuous drain currents (Id) of 5.5 A per channel. The device exhibits low on-resistance, specified at 0.03 ohms maximum. Gate-source voltage limits are ±20 V, with a threshold voltage range of 1 V to 3 V. Total power dissipation is rated at 2 W. Operating temperatures span from -55 °C to +150 °C junction temperature.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact SOIC-8 package
• Low on-resistance for efficient power switching
• Enhancement mode operation for standard logic control

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification
• Load switching applications
• Power management circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer source, as Fairchild Semiconductor's discrete component portfolio was acquired by ON Semiconductor. Confirm current production status and availability through authorized distributors. Ensure the part number matches the exact datasheet revision required for your design specifications. Check for any obsolescence notices or lifecycle changes associated with the original Fairchild branding.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel MOSFETs with 30 V rating and low Rds(on). The SOIC-8 package suits space-constrained PCB layouts. Compare thermal performance and gate charge requirements against alternative dual MOSFET packages. Ensure the 2 W power dissipation rating meets the thermal constraints of the target application environment.

FET, MOSFET Arrays Part Context

The FDS8936A belongs to the family of dual N-channel enhancement mode field effect transistors originally produced by Fairchild Semiconductor. These devices are designed for general-purpose power switching applications. The component utilizes silicon technology and is housed in an 8-pin small outline package. Similar parts in the series often share pinouts and electrical characteristics for interchangeable use in dual-channel power stages.