FET, MOSFET Arrays FDS8958 product image

FDS8958

$0.31
  • Description:MOSFET N/P-CH 30V 7A/5A 8SOIC
  • Series:PowerTrench®

SKU:9764c4431542 Category: Brand:

  
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FDS8958 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 30V 7A/5A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS8958

  • Description:MOSFET N/P-CH 30V 7A/5A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:7A, 5A
  • Rds On (Max) @ Id, Vgs:28mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:789pF @ 10V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS8958

FDS8958

FET, MOSFET Arrays Overview

The onsemi FDS8958 is a dual N- and P-channel enhancement mode PowerTrench MOSFET in an SO-8 package. Q1 (N-Channel) supports 7A continuous drain current with RDS(on) of 28mΩ at VGS=10V and 40mΩ at VGS=4.5V. Q2 (P-Channel) supports -5A continuous drain current with RDS(on) of 52mΩ at VGS=-10V and 80mΩ at VGS=-4.5V. Both channels feature a 30V Drain-Source Voltage rating, ±20V Gate-Source Voltage, and operate within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Dual N- and P-channel configuration for complementary switching applications
  • Advanced PowerTrench process technology minimizing on-state resistance
  • Fast switching speed capabilities suitable for high-frequency operation

FET, MOSFET Arrays Applications

  • Low voltage battery powered systems requiring low in-line power loss
  • DC/DC converter circuits utilizing fast switching performance
  • Power management modules where compact surface mount packaging is required

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the datasheet revision matches the specific lot code on the device marking. Ensure thermal design accounts for the specified junction-to-ambient resistance values under actual board copper pad conditions.

FET, MOSFET Arrays Selection Notes

Select this component when a single package solution for both N-channel and P-channel switching is needed. The SO-8 footprint allows for space-constrained designs. Verify that the gate drive voltage levels meet the requirements for achieving the specified low on-resistance values for optimal efficiency.

FET, MOSFET Arrays Part Context

Originally manufactured by Fairchild Semiconductor, this part utilizes the PowerTrench technology. It serves as a dual-channel alternative to using separate discrete N-channel and P-channel MOSFETs, simplifying PCB layout and reducing component count in power supply designs.

FET, MOSFET Arrays Replacement Considerations

Check for equivalents such as the FDS8958A which may offer updated specifications. Verify pinout compatibility and thermal characteristics before substitution.

FDS8958FDS8958
$0.31
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