FDS8958B_G

FET, MOSFET Arrays Overview

The FDS8958B_G is a dual N- and P-channel enhancement mode MOSFET manufactured by onsemi using the PowerTrench process. It is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V for both channels. Continuous drain current (Id) is rated at 6.4 A. The on-resistance (Rds(on)) is specified at 26 mΩ for the N-channel and 51 mΩ for the P-channel. Gate-source voltage limits are ±25 V. The gate charge (Qg) values are 12 nC and 19 nC. Operating temperature ranges from -55°C to +150°C, with power dissipation at 1.6 W.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating N-channel and P-channel transistors in a single compact package.

FET, MOSFET Arrays Applications

• Low voltage battery-powered applications requiring low on-resistance.

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix '_G' against official manufacturer documentation to confirm if it denotes a standard RoHS-compliant variant or a distinct revision. Confirm availability status as the base model FDS8958B has been marked as obsolete in some distributor records. Ensure the component source matches the original manufacturer specifications before integration into designs.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a complementary N-P pair in limited space. Compare Rds(on) and Qg parameters against alternatives like the FDS8958A if higher current handling or different switching speeds are required. Verify that the SOIC-8 thermal performance meets the system's 1.6 W dissipation requirements under expected load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the FDS8958 series of dual MOSFETs from onsemi. It shares the same package and general topology as the FDS8958A but differs in electrical characteristics such as continuous drain current and on-resistance values. The series utilizes PowerTrench technology to optimize conduction losses while maintaining fast switching capabilities.

FET, MOSFET Arrays Replacement Considerations

The FDS8958A is a related part within the same series offering similar functionality but with different Id and Rds(on) ratings. Verify pinout compatibility and electrical parameter overlaps before substitution.