FET, MOSFET Arrays FDS8962C product image

FDS8962C

$0.97
  • Description:MOSFET N/P-CH 30V 7A/5A 8SOIC
  • Series:PowerTrench®

SKU:79d45cb39f36 Category: Brand:

  
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FDS8962C is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 30V 7A/5A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS8962C

  • Description:MOSFET N/P-CH 30V 7A/5A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:7A, 5A
  • Rds On (Max) @ Id, Vgs:30mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:575pF @ 15V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS8962C

FDS8962C

FET, MOSFET Arrays Overview

The FDS8962C is a dual N- and P-channel enhancement mode power MOSFET manufactured using the PowerTrench process. It features an SOIC-8 surface mount package with a drain current of 7A for the N-channel and -5A for the P-channel. The device supports a drain-source voltage of 30V and -30V respectively, with on-resistance values of 0.030Ω at VGS=10V and 0.052Ω at VGS=-10V. Operating temperatures range from -55°C to +150°C, and thermal resistance (junction-to-ambient) is 78°C/W.

FET, MOSFET Arrays Feature Summary

  • Dual configuration integrating N-channel and P-channel transistors in a single SOIC-8 package
  • PowerTrench technology designed to minimize on-state resistance while maintaining fast switching performance
  • High power handling capability suitable for low voltage and battery-powered applications

FET, MOSFET Arrays Applications

  • Low voltage power management circuits
  • Battery-powered equipment requiring low in-line power loss
  • DC-DC converter synchronous rectification

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type and pinout alignment before integration. Review RoHS compliance documentation for regulatory adherence. Ensure storage conditions meet moisture sensitivity level requirements to prevent damage prior to soldering.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual transistor solution is required for low-voltage switching. Compare on-resistance values at specific gate voltages against load requirements. Evaluate thermal resistance parameters relative to available PCB copper area for adequate heat dissipation during continuous operation.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench MOSFET family produced by Fairchild Semiconductor, now part of onsemi. The series utilizes advanced planar trench technology to achieve high current density and low conduction losses within standard surface-mount packages commonly used in consumer electronics.

FET, MOSFET Arrays Replacement Considerations

Verify pin compatibility and electrical ratings before substituting. Check if alternative dual MOSFETs offer matching Rds(on) and voltage thresholds. Ensure thermal characteristics align with existing board design constraints.

FDS8962CFDS8962C
$0.97
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