FET, MOSFET Arrays FDSS2407 product image

FDSS2407

$1.40
  • Description:MOSFET 2N-CH 62V 3.3A 8SOIC
  • Series:PowerTrench®

SKU:2a9f3c621552 Category: Brand:

  
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FDSS2407 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 62V 3.3A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDSS2407

  • Description:MOSFET 2N-CH 62V 3.3A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):62V
  • Current - Continuous Drain (Id) @ 25°C:3.3A
  • Rds On (Max) @ Id, Vgs:110mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:4.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:300pF @ 15V
  • Power - Max:2.27W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for FDSS2407

FDSS2407

FET, MOSFET Arrays Overview

The FDSS2407 is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features an EMH package with eight pins and surface mount installation. The device supports a maximum drain-source voltage of 20 V and a continuous drain current of 6 A. Key electrical parameters include a maximum on-resistance of 39 mΩ, a gate threshold voltage range of 0.5 V to 1.3 V, and a maximum power dissipation of 1.4 W. The typical gate charge is 6.3 nC at 4.5 V. Operating temperatures extend up to +150 °C, with a maximum gate-source voltage of ±12 V.

FET, MOSFET Arrays Feature Summary

  • Dual configuration in a compact EMH package for space-constrained designs
  • Low on-resistance for efficient power handling
  • High temperature operation capability

FET, MOSFET Arrays Applications

  • Power management circuits requiring dual low-voltage switching
  • Battery protection modules
  • Load switch applications in portable electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the official onsemi datasheet to ensure correct packaging and compliance status. Confirm that the component meets RoHS and halogen-free requirements if mandated by the design specifications. Cross-reference the part number with the manufacturer's current availability list to avoid obsolete stock issues.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with low voltage ratings and high current capacity is required. The 20 V rating suits low-voltage systems, while the 6 A current handles moderate loads. Ensure the PCB layout accommodates the EMH package dimensions and thermal requirements for the specified power dissipation.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's discrete MOSFET portfolio, specifically designed for low-voltage, high-current applications. It utilizes silicon technology and is available in surface-mount packages suitable for automated assembly processes.

FET, MOSFET Arrays Replacement Considerations

Consult onsemi's official cross-reference documentation or distributor databases for verified substitute part numbers. Ensure any replacement matches the pinout, voltage ratings, and package type before implementation.

FDSS2407FDSS2407
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