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FDSS2407 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 62V 3.3A 8SOIC. Review the specifications below when checking this part for your BOM.
The FDSS2407 is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features an EMH package with eight pins and surface mount installation. The device supports a maximum drain-source voltage of 20 V and a continuous drain current of 6 A. Key electrical parameters include a maximum on-resistance of 39 mΩ, a gate threshold voltage range of 0.5 V to 1.3 V, and a maximum power dissipation of 1.4 W. The typical gate charge is 6.3 nC at 4.5 V. Operating temperatures extend up to +150 °C, with a maximum gate-source voltage of ±12 V.
Verify the specific ordering suffix against the official onsemi datasheet to ensure correct packaging and compliance status. Confirm that the component meets RoHS and halogen-free requirements if mandated by the design specifications. Cross-reference the part number with the manufacturer's current availability list to avoid obsolete stock issues.
Select this component when a dual N-channel MOSFET with low voltage ratings and high current capacity is required. The 20 V rating suits low-voltage systems, while the 6 A current handles moderate loads. Ensure the PCB layout accommodates the EMH package dimensions and thermal requirements for the specified power dissipation.
This component belongs to onsemi's discrete MOSFET portfolio, specifically designed for low-voltage, high-current applications. It utilizes silicon technology and is available in surface-mount packages suitable for automated assembly processes.
Consult onsemi's official cross-reference documentation or distributor databases for verified substitute part numbers. Ensure any replacement matches the pinout, voltage ratings, and package type before implementation.
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