FDW2503N

Description：MOSFET 2N-CH 20V 5.5A 8TSSOP
Series：PowerTrench®

SKU:9840ec81f939 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

FDW2503N is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 5.5A 8TSSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDW2503N

Description：MOSFET 2N-CH 20V 5.5A 8TSSOP
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5.5A
Rds On (Max) @ Id, Vgs：21mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1082pF @ 10V
Power - Max：600mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDW2503N

FDW2503N

FET, MOSFET Arrays Overview

The FDW2503N is a dual N-Channel PowerTrench MOSFET optimized for power management applications with gate drive voltages ranging from 2.5V to 12V. It features a low profile TSSOP-8 package and extended V_GSS range of ±12V. Key electrical parameters include a drain-source voltage (V_DSS) of 20V, continuous drain current (I_D) of 5.5A, and maximum power dissipation (P_D) of 1.0W at 25°C. The static drain-source on-resistance (R_DS(on)) is specified as 21mΩ max at V_GS = 4.5V and 35mΩ max at V_GS = 2.5V. Total gate charge (Q_g) is typically 12nC.

FET, MOSFET Arrays Feature Summary

Dual N-Channel configuration in a low profile TSSOP-8 package
Optimized for wide range gate drive voltages from 2.5V to 12V
Extended gate-source voltage rating of ±12V suitable for battery applications
High performance trench technology for extremely low R_DS(ON)

FET, MOSFET Arrays Applications

Load switch
Motor drive
DC/DC conversion
Power management

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm the device marking '2503N' matches the datasheet specifications. Ensure the package type is TSSOP-8 and check for RoHS compliance markings. Validate that the component is sourced from authorized distributors to avoid counterfeit parts.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel switching with low gate drive requirements down to 2.5V. Consider the 20V V_DSS limit and 5.5A continuous current capability. Evaluate thermal resistance (R_θJA) based on PCB copper pad size, as it significantly impacts power dissipation capabilities.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family, utilizing advanced trench technology to achieve low on-resistance. Originally manufactured by Fairchild Semiconductor, the product line is now managed under onsemi following corporate acquisition. The dual configuration allows for compact designs in space-constrained power management circuits.

FET, MOSFET Arrays Replacement Considerations

Check for direct equivalents within the onsemi PowerTrench portfolio or other manufacturers offering dual N-channel MOSFETs with similar 20V ratings and TSSOP-8 packaging. Verify pinout compatibility and ensure R_DS(on) and Q_g values meet the original design constraints.