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FDW2503NZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 5.5A 8TSSOP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDW2503NZ
- Description：MOSFET 2N-CH 20V 5.5A 8TSSOP
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5.5A
- Rds On (Max) @ Id, Vgs：20mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1286pF @ 10V
- Power - Max：600mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDW2503NZ
FET, MOSFET Arrays Overview
The FDW2503NZ is a dual N-channel 2.5V specified PowerTrench MOSFET designed for power management applications with gate drive voltages ranging from 2.5V to 12V. It features an extended VGSS range of ±12V and includes ESD protection diodes. The device operates within a junction temperature range of -55°C to +150°C, offering a continuous drain current of 5.5A and a breakdown voltage of 20V. Static on-resistance is rated at 20mΩ at VGS=4.5V and 26mΩ at VGS=2.5V. Total gate charge is typically 17nC, with input capacitance at 1286pF.
FET, MOSFET Arrays Feature Summary
- Dual N-Channel configuration utilizing advanced PowerTrench technology for low on-resistance
- Optimized for low-voltage power management with 2.5V gate drive capability
- Integrated ESD protection diodes between gate and source terminals
FET, MOSFET Arrays Applications
- Load switch circuits
- Motor drive systems
- DC/DC conversion modules
- Power management units
FET, MOSFET Arrays Procurement Notes
Verify the component authenticity by checking the package marking against official datasheet specifications. Confirm the manufacturer origin as Fairchild Semiconductor or its successor entity. Ensure the ordering suffix matches the standard reel size and tape width requirements for automated assembly processes.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring low-profile surface mount packaging with robust gate drive characteristics. Evaluate thermal resistance parameters based on specific copper pad dimensions on the printed circuit board. Consider the extended gate-source voltage tolerance when designing battery-powered systems.
FET, MOSFET Arrays Part Context
This device belongs to the PowerTrench family of MOSFETs, which are engineered for high performance and efficiency in switching applications. The series utilizes trench technology to minimize conduction losses while maintaining fast switching speeds suitable for modern power electronics.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference documentation for verified substitute part numbers. Ensure any replacement maintains identical pinout configurations and electrical ratings to guarantee compatibility with existing circuit designs.
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