FDW2507N

FET, MOSFET Arrays Overview

The FDW2507N is a common drain N-Channel PowerTrench MOSFET designed for low-voltage applications. It features a TSSOP-8 package with isolated source and drain pins, optimizing thermal performance. The device supports a continuous drain current of 7.5 A at 25°C and withstands a drain-source voltage of 20 V. Key electrical parameters include an on-resistance of 19 mΩ at VGS = 4.5 V and 23 mΩ at VGS = 2.5 V. Gate threshold voltage ranges from 0.6 V to 1.5 V. Total gate charge is typically 20 nC at VGS = 4.5 V. Operating junction temperature spans -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Advanced PowerTrench process technology optimized for extremely low RDS(ON) at VGS = 2.5 V
• Monolithic common drain design with isolated source and drain pins in a low profile TSSOP-8 package

FET, MOSFET Arrays Applications

• Li-Ion Battery Pack management systems

FET, MOSFET Arrays Procurement Notes

Verify the component origin carefully, as Fairchild Semiconductor was acquired by ON Semiconductor. Ensure the datasheet revision matches the specific manufacturing batch requirements. Confirm that the TSSOP-8 package marking corresponds to the '2507N' identifier. Check for authorized distributor status to avoid counterfeit parts, adhering to anti-counterfeiting policies regarding traceability and warranty coverage.

FET, MOSFET Arrays Selection Notes

Select this component when a low-profile surface-mount solution is required for 20 V N-Channel switching. The specific optimization for 2.5 V gate drive makes it suitable for battery-powered systems where gate drive voltage may be limited. Verify that the 7.5 A continuous current rating and 1.6 W power dissipation capabilities align with the thermal design constraints of the target PCB layout.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of MOSFETs, originally developed by Fairchild Semiconductor before its acquisition by ON Semiconductor. The FDW2507N specifically utilizes a common drain configuration within a TSSOP-8 lead frame, distinguishing it from standard dual-channel or single-channel variants by providing dedicated thermal paths through isolated drain pins.

FET, MOSFET Arrays Replacement Considerations

FDW2507NL

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current?

The maximum continuous drain current (ID) is 7.5 A at TA = 25°C.

How does the package design affect thermal resistance?

The TSSOP-8 package has isolated source and drain pins. Thermal resistance (RθJA) is 77 °C/W on a 1in² pad of 2 oz copper and 114 °C/W on a minimum pad of 2 oz copper.

What is the typical gate threshold voltage range?

The gate threshold voltage (VGS(th)) ranges from a minimum of 0.6 V to a maximum of 1.5 V at ID = 250 µA.