FET, MOSFET Arrays FDW2516NZ product image

FDW2516NZ

$0.27
  • Description:MOSFET 2N-CH 20V 5.8A 8TSSOP
  • Series:PowerTrench®

SKU:b40ec49401d3 Category: Brand:

  
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FDW2516NZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET 2N-CH 20V 5.8A 8TSSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDW2516NZ

  • Description:MOSFET 2N-CH 20V 5.8A 8TSSOP
  • Series:PowerTrench®
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.8A
  • Rds On (Max) @ Id, Vgs:30mOhm @ 5.8A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:745pF @ 10V
  • Power - Max:1.1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDW2516NZ

FDW2516NZ

FET, MOSFET Arrays Overview

The FDW2516NZ is a dual N-channel enhancement mode MOSFET from Fairchild Semiconductor, utilizing the PowerTrench process. It features a 20 V drain-source voltage and a continuous drain current of 5.8 A. The device is housed in an 8-pin TSSOP package with dimensions of 3x4.9 mm. Key electrical parameters include a maximum on-resistance of 30 mΩ at VGS=4.5V and 45 mΩ at VGS=2.5V. It operates within a temperature range of -55°C to +150°C junction temperature, with a total power dissipation of 1.1 W.

FET, MOSFET Arrays Feature Summary

  • Dual common-drain configuration with built-in diodes for space-efficient designs
  • Optimized for low gate drive voltages starting at 2.5V
  • Rugged gate structure compatible with standard logic levels

FET, MOSFET Arrays Applications

  • Power management circuits requiring low voltage operation
  • Battery-powered portable electronic devices
  • DC-DC converter synchronous rectification

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the received parts match the specific FDW2516NZ marking and packaging specifications. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent damage prior to soldering. Review the latest datasheet for any updates regarding thermal characteristics or absolute maximum ratings before integration into final products.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications. The 2.5V specified gate threshold makes it suitable for systems driven by single-cell lithium batteries or low-voltage logic controllers. Compare the 30 mΩ on-resistance against load requirements to ensure efficiency targets are met within the TSSOP-8 thermal constraints.

FET, MOSFET Arrays Part Context

This part belongs to Fairchild's PowerTrench family, designed for high-efficiency switching. The FDW2516NZ specifically addresses the need for dual-channel integration in small form factors. It complements other low-voltage MOSFETs in the portfolio by offering a balance between current handling capability and physical footprint for consumer electronics.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include FDW2510NZ or FDW2515NZ, which share similar voltage ratings and package types. Verify pinout compatibility and on-resistance values when cross-referencing with alternative manufacturers' offerings to ensure circuit performance remains unchanged.

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