FDW2601NZ

FET, MOSFET Arrays Overview

The FDW2601NZ is a dual N-channel enhancement mode MOSFET manufactured using the PowerTrench process. It features a low-profile TSSOP-8 package with eight pins. The device supports a drain-source voltage of 30 V and a continuous drain current of 8.2 A at 25°C. The on-resistance is specified as 15 mΩ at VGS = 4.5 V and 20 mΩ at VGS = 2.5 V. Total gate charge is typically 20 nC at 4.5 V. The extended gate-source voltage range allows ±12 V operation. Thermal resistance junction-to-ambient is 77 °C/W on a minimum copper pad.

FET, MOSFET Arrays Feature Summary

• Dual configuration within a single low-profile TSSOP-8 package for space-constrained designs
• PowerTrench technology optimized for extremely low on-state resistance
• Extended gate-source voltage range supporting ±12 V for battery applications
• High electrostatic discharge protection capability

FET, MOSFET Arrays Applications

• Load switch circuits
• Battery charge management
• Battery disconnect circuits

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking the marking code '2601NZ' against the datasheet specifications. Confirm the package type is TSSOP-8 and the reel size is 13 inches with a tape width of 12 mm containing 2500 units per reel. Ensure the ordering suffix matches the required quantity and packaging format.

FET, MOSFET Arrays Selection Notes

Select this component when designing portable electronics requiring dual N-channel switching with low on-resistance. The device is suitable for applications needing operation at VGS levels as low as 2.5 V. Consider the thermal resistance of 77 °C/W for heat dissipation requirements in steady-state conditions.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench series, utilizing advanced trench technology to minimize on-state resistance while maintaining low gate charge. Originally produced by Fairchild Semiconductor, it is designed for superior switching performance in portable electronic applications.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists or distributor databases for verified substitute part numbers from Fairchild or other manufacturers before implementation.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage rating is ±12 V.

How does the on-resistance vary with gate voltage?

The on-resistance is 15 mΩ maximum at VGS = 4.5 V and 20 mΩ maximum at VGS = 2.5 V.

What is the typical ESD protection level?

The device provides a typical Human Body Model (HBM) ESD protection level of 3.5 kV.