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FDW9926A is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 4.5A 8TSSOP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDW9926A
- Description：MOSFET 2N-CH 20V 4.5A 8TSSOP
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：32mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：630pF @ 10V
- Power - Max：600mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDW9926A
FET, MOSFET Arrays Overview
The FDW9926A is a dual N-channel PowerTrench MOSFET designed for power management applications. It features a rugged gate optimized for wide gate drive voltage ranges from 2.5V to 10V. The device provides a continuous drain current of 4.5A with a maximum drain-source voltage of 20V. Static drain-source on-resistance is specified at 32mΩ at VGS=4.5V and 45mΩ at VGS=2.5V. Total power dissipation reaches 1.0W in the low-profile TSSOP-8 package. Operating junction temperature spans -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Optimized for battery circuit applications with extended VGSS range
- High performance trench technology for extremely low RDS(ON)
- Low profile TSSOP-8 package
FET, MOSFET Arrays Applications
- Battery protection
- Load switch
- Power management
FET, MOSFET Arrays Procurement Notes
Verify authenticity through authorized distributors or direct manufacturer channels due to counterfeiting risks. Confirm component status as obsolete by Fairchild Semiconductor, now part of onsemi. Ensure ordering suffixes match specific reel sizes and tape widths. Validate RoHS compliance and lead-free standards against project requirements before procurement.
FET, MOSFET Arrays Selection Notes
Select this component when low on-resistance at reduced gate voltages is required. Verify thermal resistance calculations based on copper pad area. Ensure gate drive signals remain within the ±12V absolute maximum rating. Consider the 1.0W power dissipation limit under steady-state conditions for proper heat sinking design.
FET, MOSFET Arrays Part Context
Originally manufactured by Fairchild Semiconductor, this component belongs to the PowerTrench series. Fairchild was acquired by onsemi. The datasheet revision indicates E1(W). The device marking is 9926A. It utilizes advanced trench process technology for improved switching characteristics compared to standard planar devices.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other dual N-channel MOSFETs only if electrical parameters and package dimensions align precisely.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
