FDY1002PZ

FET, MOSFET Arrays Overview

The FDY1002PZ is a dual P-channel enhancement-mode MOSFET from the onsemi PowerTrench series, housed in a surface-mount SC-89 package with six pins. It features an isolated transistor configuration designed for low-voltage switching applications. Key electrical parameters include a maximum drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 830 mA at 25°C. The device exhibits a maximum drain-source on-resistance (Rds) of 1.8 Ω and a typical gate charge (Qg) of 2.2 nC at Vgs. It supports a maximum power dissipation (Pd) of 625 mW and operates within a temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual isolated P-channel architecture providing two independent switching channels in a compact footprint.
• PowerTrench technology optimized for efficient low-voltage power management and switching performance.
• Enhancement-mode operation compatible with standard logic-level control signals.

FET, MOSFET Arrays Applications

• Low-side or high-side switching in portable consumer electronics.
• Battery protection circuits requiring isolated channel control.
• General-purpose signal switching in mobile devices.

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm lot traceability and RoHS compliance status prior to integration. Check for obsolescence notices as availability may vary. Ensure storage conditions meet moisture sensitivity level requirements to prevent package damage during soldering processes.

FET, MOSFET Arrays Selection Notes

Select this component when dual isolated P-channel switching is required in space-constrained designs. Compare Rds(on) and Qg values against system efficiency targets. Ensure the 20 V rating exceeds peak circuit voltages. Verify thermal management capabilities align with the 625 mW dissipation limit under expected operating loads.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of low-voltage MOSFETs from onsemi. It shares design principles with other FDY-series components but offers specific dual-channel isolation in the SC-89 package. It serves as a discrete solution for applications where integrated power switches are unsuitable due to isolation requirements.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 20 V rating, 830 mA current capacity, and SC-89 6-pin package. Verify pinout compatibility and electrical parameters such as Rds(on) and Qg. Consult manufacturer cross-reference lists for validated replacements.