FDY3000NZ

Description：MOSFET 2N-CH 20V 0.6A SOT563F
Series：PowerTrench®

SKU:96c707be0562 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

FDY3000NZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 0.6A SOT563F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDY3000NZ

Description：MOSFET 2N-CH 20V 0.6A SOT563F
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：600mA
Rds On (Max) @ Id, Vgs：700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：60pF @ 10V
Power - Max：446mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563F
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDY3000NZ

FDY3000NZ

FET, MOSFET Arrays Overview

The FDY3000NZ is a dual N-channel MOSFET utilizing PowerTrench technology, designed for low-voltage switching applications. It features a 20V drain-source voltage rating and a continuous drain current of 600mA. The device specifies an on-resistance of 700mΩ at VGS=4.5V and 850mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage of 0.6V to 1.3V, total gate charge of 1.1nC, and forward transconductance of 1.8S. Operating temperatures range from -55°C to +150°C with a power dissipation of 625mW.

FET, MOSFET Arrays Feature Summary

Dual N-Channel configuration optimized for low gate drive voltages
PowerTrench process technology for minimized on-resistance
Integrated ESD protection diode between gate and source

FET, MOSFET Arrays Applications

Lithium-Ion battery pack management

FET, MOSFET Arrays Procurement Notes

This component is officially discontinued and not recommended for new designs. Buyers must contact the manufacturer representative for further information regarding availability or obsolescence. Verification of the specific part status against official documentation is required before any procurement consideration.

FET, MOSFET Arrays Selection Notes

Designers should verify that the 20V voltage rating and 600mA current limit meet system requirements. The specified on-resistance values at 2.5V and 4.5V gate drives must be validated for the target application's efficiency needs. Thermal resistance characteristics depend heavily on board copper pad design.

FET, MOSFET Arrays Part Context

Originally manufactured by Fairchild Semiconductor, this part was integrated into the ON Semiconductor portfolio following corporate acquisition. The datasheet notes that ordering suffixes may have been updated during this transition, requiring verification of current nomenclature on the official website.