FDZ1416NZ

FET, MOSFET Arrays Overview

The FDZ1416NZ is a dual N-channel MOSFET in a common-drain configuration, utilizing PowerTrench technology and WLCSP packaging. It features a maximum source-to-source on-resistance of 23 mΩ at VGS = 4.5 V and IS1S2 = 1 A. The device supports a continuous current of 7 A and withstands up to 24 V between Source1 and Source2. Total gate charge is typically 12 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to +150 °C, with thermal resistance (junction-to-ambient) rated at 74 °C/W on a standard copper pad.

FET, MOSFET Arrays Feature Summary

• Dual common-drain N-channel architecture enabling bidirectional current flow within a single package
• Ultra-thin WL-CSP footprint occupying minimal PCB area while maintaining high power handling capability
• Advanced low-pitch packaging process providing excellent thermal transfer characteristics alongside low gate charge

FET, MOSFET Arrays Applications

• Li-Ion battery pack protection circuits
• Battery management systems
• Load switch applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer databases to ensure compatibility with current system requirements. Confirm that the component meets RoHS compliance standards for your region. Review the datasheet for any updates regarding Fairchild Semiconductor integration changes or updated device numbering conventions before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require bidirectional current control. Evaluate the 23 mΩ on-resistance against your specific load current requirements to ensure acceptable power dissipation. Consider the 7 A continuous current rating and the 74 °C/W thermal resistance for adequate heat dissipation on the target PCB layout.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench series of MOSFETs manufactured by ON Semiconductor. It represents an evolution of Fairchild Semiconductor's discrete semiconductor portfolio following corporate integration. The part utilizes advanced silicon processes optimized for ultra-portable consumer electronics and battery-powered devices requiring compact form factors.

FET, MOSFET Arrays Replacement Considerations

Check for updated part numbers containing dashes instead of underscores due to system integration changes. Verify equivalent specifications if substituting with other dual common-drain MOSFETs in WL-CSP packages.