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FDZ1905PZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 6WLCSP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDZ1905PZ
- Description：MOSFET 2P-CH 6WLCSP
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：126mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：900mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFBGA, WLCSP
- Supplier Device Package：6-WLCSP (1x1.5)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDZ1905PZ
FET, MOSFET Arrays Overview
The FDZ1905PZ is a common drain P-channel MOSFET from onsemi, utilizing PowerTrench technology. It features a -20V drain-source voltage rating and supports a continuous current of -3A. The device operates in enhancement mode with a maximum junction temperature of 150°C. It is housed in an ultra-thin BGA-6 package (1.50 x 1 mm), compliant with RoHS standards. The component integrates two elements with a built-in diode, designed for low-voltage power switching applications requiring compact form factors.
FET, MOSFET Arrays Feature Summary
- PowerTrench technology for optimized performance
- Common drain configuration with integrated diode
- Ultra-thin BGA-6 packaging for space-constrained designs
FET, MOSFET Arrays Applications
- Low-voltage DC-DC converters
- Load switches in portable electronics
- Battery protection circuits
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix and revision level against the official datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status and material composition declarations through authorized channels. Check for any recent product lifecycle updates or obsolescence notices directly from the manufacturer before finalizing procurement plans.
FET, MOSFET Arrays Selection Notes
Select this component when a P-channel MOSFET with a -20V rating and -3A current capacity is required in a minimal footprint. The common drain topology and integrated diode simplify circuit design. Ensure the application voltage and current stresses remain within the specified absolute maximum ratings to maintain reliability.
FET, MOSFET Arrays Part Context
This part belongs to onsemi's PowerTrench MOSFET family, which focuses on low RDS(on) and high efficiency. The FDZ1905PZ specifically targets applications needing small surface-mount solutions. It complements other low-voltage discrete semiconductors in the portfolio for power management systems.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution guides for equivalent parts. Verify pinout compatibility and electrical parameters such as VDS, ID, and RDS(on) before replacing. Ensure thermal characteristics and package dimensions match the existing PCB layout constraints.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
