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FDZ2553NZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET 2N-CH 20V 9.6A 18BGA. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDZ2553NZ
- Description：MOSFET 2N-CH 20V 9.6A 18BGA
- Series：PowerTrench®
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：9.6A
- Rds On (Max) @ Id, Vgs：14mOhm @ 9.6A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1240pF @ 10V
- Power - Max：2.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：18-WFBGA
- Supplier Device Package：18-BGA (2.5x4)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDZ2553NZ
FET, MOSFET Arrays Overview
The FDZ2553NZ is a monolithic common drain N-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. It utilizes advanced trench technology to optimize on-resistance at low gate voltages, specifically targeting 2.5V specifications. The device features a BGA package suitable for surface mount applications. Key electrical parameters include a maximum drain-source voltage of 20 V and a continuous drain current of 1.7 W power dissipation capability. The component is designed for efficient power switching in portable electronics.
FET, MOSFET Arrays Feature Summary
- Monolithic common drain architecture for simplified circuit design
- Advanced PowerTrench process optimizing RDS(on) at 2.5V gate drive
- N-Channel enhancement mode operation
- BGA surface mount packaging
FET, MOSFET Arrays Applications
- Portable battery-powered equipment
- DC/DC converters
- Power management circuits
- Low voltage switching applications
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the BGA package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified power dissipation limits under actual operating conditions. Cross-reference part numbers to avoid obsolete or discontinued variants.
FET, MOSFET Arrays Selection Notes
Select this component when a 20 V N-Channel MOSFET with optimized performance at 2.5V gate drive is required. The common drain configuration suits specific topology requirements. Evaluate the BGA package constraints against available board space. Consider the PowerTrench series characteristics for efficiency needs in low-voltage systems.
FET, MOSFET Arrays Part Context
The FDZ2553NZ belongs to Fairchild's PowerTrench series, known for high-performance trench MOSFETs. This specific model represents a monolithic common drain design, distinguishing it from standard source-grounded configurations. It targets applications requiring efficient switching at lower gate drive voltages within the 20 V rating range.
FET, MOSFET Arrays Replacement Considerations
Check for direct substitutes within the PowerTrench family offering similar 20 V ratings and BGA packages. Verify pin compatibility and electrical parameter equivalence for any replacement candidates.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
