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FF06020FA is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists fastSiC. Its product description is SICFET N-CH 650V 101A TOLL. Review the specifications below when checking this part for your BOM.
The FF06020FA is a Silicon Carbide MOSFET from the Falcon Series by Fast SiC Semiconductor Inc., rated for 650V drain-source voltage and 101A continuous drain current. It features a typical on-state resistance of 22mΩ at 25°C, rising to 28mΩ at 175°C. The device supports a recommended gate-source turn-on voltage of 15-18V and operates within a junction temperature range of -55°C to 175°C. Packaged in TOLL (MO-299B), it offers a thermal impedance of 0.45 K/W and handles up to 333W power dissipation.
Verify the specific package variant against the datasheet part number table; the 'FA' suffix corresponds to the TOLL package. Confirm that the preliminary revision status does not impact final design-in specifications. Ensure application conditions strictly adhere to the maximum ratings provided, particularly regarding case temperature limits for continuous current derating.
Select this component when designing circuits requiring low conduction losses and fast switching speeds in the 650V class. The TOLL package facilitates efficient heat dissipation through the tab. Consider the external gate resistance requirements to balance switching speed against electromagnetic interference. Verify compatibility with existing PCB land patterns for the MO-299B outline.
This device belongs to the Falcon Series of wide bandgap semiconductors manufactured by Fast SiC Semiconductor Inc. It utilizes silicon carbide technology to achieve superior performance compared to traditional silicon devices. The series targets modern power electronics demanding higher efficiency and reduced system size.
No public confirmed substitute part numbers are documented in the source material.
The recommended operating gate-source turn-on voltage is between 15V and 18V.
Yes, the junction temperature rating extends up to 175°C, allowing for high-temperature applications.
The internal gate resistance is typically 1.5 Ω at 1MHz.
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