SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF1000R17IE4D_B2 is a half-bridge IGBT module from Infineon's TRENCHSTOP™ PrimePACK™3 series. It features a 1700 V collector-emitter voltage (VCES) and a continuous DC collector current of 1000 A at TC=100°C, with a peak repetitive current of 2000 A. The typical collector-emitter saturation voltage (VCEsat) is 2.00 V at Tvj=25°C. Total power dissipation reaches 6.25 kW. The integrated freewheeling diode has a forward voltage of 1.70 V at 25°C. Thermal resistance from junction to case is 24.0 K/kW for the IGBT and 35.0 K/kW for the diode. The module includes an NTC thermistor rated at 5.00 kΩ at 25°C.
Verify the exact ordering suffix against official documentation, as variations may exist. Confirm RoHS compliance status through the manufacturer's latest release notes or specific product data sheets. Ensure that the component matches the required electrical ratings and mechanical dimensions for your specific application design before finalizing procurement.
Select this module for applications requiring high power density and robust thermal cycling capability. Consider the 1700 V rating for medium-voltage industrial systems. Evaluate the switching loss characteristics against your system frequency requirements. Ensure adequate heatsinking to maintain junction temperatures within the specified operational limits during high-current operation.
This component belongs to Infineon's TRENCHSTOP IGBT4 technology family, utilizing the PrimePACK™3 packaging format. It is designed for high-power industrial applications where reliability and efficiency are critical. The module integrates both IGBT and diode chips on a copper base plate, providing a compact solution for inverter bridges.
Public confirmed substitute part numbers: None available.