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The FF1000R17IE4PBOSA1 is a PrimePACK™3 IGBT module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It provides a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 1000 A at TH = 60°C with Tvj max = 175°C. The repetitive peak collector current (ICRM) reaches 2000 A for a pulse duration of 1 ms. The typical collector-emitter saturation voltage (VCEsat) is 2.00 V at Tvj = 25°C, rising to 2.80 V at Tvj = 150°C under IC = 1000 A conditions. The integrated diode exhibits a forward voltage (VF) of 1.85 V at Tvj = 25°C. Thermal resistance from junction to heatsink is 37.1 K/kW per IGBT and 68.5 K/kW per diode.
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure compliance with RoHS standards and check for pre-applied TIM handling requirements during storage and transport. Confirm mounting torque specifications for M4 and M8 terminals before assembly.
Select this component for applications requiring high current density and low switching losses. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Evaluate thermal management based on the specified junction-to-heatsink resistance values and maximum operating temperature limits.
This module belongs to the PrimePACK™3 series utilizing IGBT4 technology. It combines high performance with robust mechanical design features suitable for industrial environments. The package offers high reliability through advanced insulation materials and large safety distances between terminals.
Consult official Infineon cross-reference lists for verified substitutes. Verify electrical parameters such as VCES, IC nom, and package dimensions match the original design requirements before implementation.