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The FF1000R17IE4S4BOSA2 is a high-power IGBT module from Infineon Technologies, utilizing Trenchstop IGBT4-E4 technology. It features a dual half-bridge configuration within the PrimePACK 3 package. The device supports a collector-emitter voltage of 1700 V and a nominal continuous collector current of 1000 A at 25°C. Typical saturation voltages are 2.0 V for the IGBT and 1.85 V for the anti-parallel diode at 25°C. It operates within a junction temperature range of -40°C to +150°C and utilizes screw mounting.
Verify the specific suffix BOSA2 against official Infineon documentation to confirm exact manufacturing lot details and compliance status. Ensure the component matches the required PrimePACK 3 footprint and terminal configuration for your assembly process.
Select this module for applications requiring high current density and robust thermal management. Confirm that the gate drive circuitry accommodates the specific charge requirements of the IGBT4-E4 technology and that the cooling system can handle the specified power dissipation levels.
This component belongs to the PrimePACK family, designed for industrial power electronics. It represents an evolution in high-current modules, offering improved reliability compared to previous generations while maintaining compatibility with standard mechanical interfaces.
Direct substitutes include FF1000R17IE4 and FF1000R17IE4BOSA1. Verify electrical parameters and pinout compatibility before substitution, as suffix variations may indicate different packaging or testing standards.