FET, MOSFET Arrays FF11MR12W1M1B11BOMA1 product image

FF11MR12W1M1B11BOMA1

  • Description:MOSFET 2N-CH 1200V 100A MODULE
  • Series:CoolSiC™+

SKU:d1ae72abce8f Category: Brand:

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FF11MR12W1M1B11BOMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V 100A MODULE. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF11MR12W1M1B11BOMA1

  • Description:MOSFET 2N-CH 1200V 100A MODULE
  • Series:CoolSiC™+
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:100A
  • Rds On (Max) @ Id, Vgs:11mOhm @ 100A, 15V
  • Vgs(th) (Max) @ Id:5.55V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs:250nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds:7950pF @ 800V
  • Power - Max:-
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FF11MR12W1M1B11BOMA1

FF11MR12W1M1B11BOMA1

FET, MOSFET Arrays Overview

The FF11MR12W1M1B11BOMA1 is a CoolSiC MOSFET module from Infineon Technologies, utilizing Silicon Carbide technology. It features an N-Channel dual configuration within the EasyDUAL PressFIT package. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 100 A at 25°C. The on-resistance is 11 mOhms, with gate-source voltage limits of -10 V to +20 V and a threshold voltage of 3.5 V. Operating temperatures range from -40°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Utilizes Silicon Carbide (SiC) semiconductor technology for high-performance power switching.
  • Features a dual N-Channel configuration integrated into a single module structure.
  • Designed for press-fit mounting to facilitate automated assembly processes.
  • Part of the CoolSiC Module series optimized for low power loss applications.

FET, MOSFET Arrays Applications

  • High-frequency power conversion systems
  • Industrial motor drive inverters
  • Uninterruptible power supply (UPS) units

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified partners. Confirm that the specific suffix BOMA1 matches project requirements, as ordering suffixes may indicate variations in packaging or testing standards. Ensure handling procedures comply with electrostatic discharge protocols for sensitive SiC devices.

FET, MOSFET Arrays Selection Notes

Select this module when high thermal conductivity and low switching losses are required in compact designs. The 1.2 kV rating suits medium-voltage applications. Evaluate the 11 mOhm on-resistance against thermal management capabilities to ensure junction temperature remains within the +150°C limit during operation.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon CoolSiC Module family, specifically the EasyDUAL PressFIT series. These modules integrate multiple SiC MOSFETs to provide robust power solutions. The EasyDUAL form factor allows for efficient heat dissipation through direct mounting to cold plates or heatsinks.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate drivers and thermal interfaces before considering alternative components.

FF11MR12W1M1B11BOMA1FF11MR12W1M1B11BOMA1

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