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FF11MR12W1M1B11BOMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V 100A MODULE. Review the specifications below when checking this part for your BOM.
The FF11MR12W1M1B11BOMA1 is a CoolSiC MOSFET module from Infineon Technologies, utilizing Silicon Carbide technology. It features an N-Channel dual configuration within the EasyDUAL PressFIT package. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 100 A at 25°C. The on-resistance is 11 mOhms, with gate-source voltage limits of -10 V to +20 V and a threshold voltage of 3.5 V. Operating temperatures range from -40°C to +150°C.
Verify component authenticity through authorized Infineon distributors or certified partners. Confirm that the specific suffix BOMA1 matches project requirements, as ordering suffixes may indicate variations in packaging or testing standards. Ensure handling procedures comply with electrostatic discharge protocols for sensitive SiC devices.
Select this module when high thermal conductivity and low switching losses are required in compact designs. The 1.2 kV rating suits medium-voltage applications. Evaluate the 11 mOhm on-resistance against thermal management capabilities to ensure junction temperature remains within the +150°C limit during operation.
This component belongs to the Infineon CoolSiC Module family, specifically the EasyDUAL PressFIT series. These modules integrate multiple SiC MOSFETs to provide robust power solutions. The EasyDUAL form factor allows for efficient heat dissipation through direct mounting to cold plates or heatsinks.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate drivers and thermal interfaces before considering alternative components.
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