FF1200R17KE3NOSA1

Overview

The FF1200R17KE3NOSA1 is a dual IGBT module from the IGBT3-E3 series, designed for industrial applications. It features a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC nom) of 1200 A at TC = 80°C. The package type is IHM130-10, with dimensions of 130 mm by 140 mm. Key electrical parameters include a typical collector-emitter saturation voltage (VCE sat) of 2.00 V at Tvj = 25°C and a forward voltage (VF) of 1.80 V for the integrated diode. Total power dissipation reaches 5.95 kW at TC = 25°C.

Feature Summary

• Dual topology integrating an IGBT switch and an anti-parallel freewheeling diode within a single unit.
• Utilizes IGBT3-E3 technology to provide optimized switching characteristics and thermal performance.
• Features a copper baseplate with internal Al2O3 basic insulation for high isolation voltage.

Applications

• Industrial motor drives
• Medium voltage variable frequency drives
• Uninterruptible power supplies

Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified partners. Confirm the specific ordering suffix matches project requirements, as variations may exist. Request official datasheets and quality certificates upon order placement to ensure compliance with technical specifications and traceability standards.

Selection Notes

Evaluate thermal resistance values against the system's cooling strategy to maintain junction temperatures within the -40°C to 125°C operating range. Ensure gate drive circuits accommodate the specified peak voltage limits and internal gate resistance. Verify mechanical mounting torque specifications to prevent damage during installation.

Part Context

This component belongs to the FF1200R17KE3 family, representing a generation of high-power IGBT modules. It shares core electrical ratings with variants like FF1200R17KE3 but includes specific manufacturing identifiers in its full part number. The module is engineered for robust operation in demanding power conversion environments.

Replacement Considerations

FF1200R17KE3

FAQ

What is the maximum repetitive peak reverse voltage for the integrated diode?

The maximum repetitive peak reverse voltage (VRRM) for the diode is 1700 V at a junction temperature of 25°C.

What is the isolation test voltage rating of the module?

The module supports an isolation test voltage (VISOL) of 3.4 kV RMS at 50 Hz for one minute.

What material is used for the module baseplate?

The module baseplate is constructed from copper (Cu).