FF12080E-3A

Single FETs, MOSFETs Overview

The FF12080E-3A is a Silicon Carbide (SiC) MOSFET from the Falcon Series by Fast SiC Semiconductor Inc., housed in a TO-247-3L package. It features a drain-source voltage of 1200 V and a typical on-state resistance of 83 mΩ at 25°C. The device supports a continuous drain current of 29 A at 25°C case temperature, with a maximum power dissipation of 180 W. Key electrical parameters include a total gate charge of 73 nC and an avalanche energy rating of 400 mJ. Operating temperatures range from -55°C to 175°C for both junction and storage.

Single FETs, MOSFETs Feature Summary

• Optimized on-resistance combined with rapid switching behavior for high efficiency.
• Clean Kelvin-source pin-out design compatible with standard gate drivers.
• High avalanche endurance capability suitable for robust power applications.
• RoHS compliant and halogen-free construction.

Single FETs, MOSFETs Applications

• Switching mode power supplies
• Power factor correction and DC/DC converters
• Electric vehicle charging stations
• Uninterruptible power systems
• Renewable energy inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'E' against the manufacturer's latest documentation to confirm pinout configuration and marking details. Ensure compatibility with recommended gate-source turn-on voltages between 15V and 18V during integration. Confirm thermal management requirements align with the specified junction-to-case thermal impedance for reliable operation within the rated temperature limits.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling and low conduction losses. Consider the 83 mΩ on-resistance for efficiency optimization in medium-power applications. Evaluate the 29 A continuous current rating against peak load demands. Verify that the TO-247-3L package fits the available PCB footprint and cooling infrastructure constraints.

Single FETs, MOSFETs Part Context

This part belongs to the Falcon Series of Silicon Carbide MOSFETs manufactured by Fast SiC Semiconductor Inc. The series targets high-performance power conversion systems. The FF12080E-3A variant specifically utilizes the TO-247-3L package format, distinguishing it from other series members like the FF12080QA which uses a four-lead configuration.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer directly for comparable products or direct substitutes. Cross-referencing requires matching the 1200 V rating, 80 mΩ class resistance, and TO-247-3L package dimensions to ensure functional equivalence in existing circuit designs.