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The FF1400R12IP4PBOSA1 is a half-bridge IGBT module utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 1400 A at TH = 60°C. The repetitive peak collector current (ICRM) reaches 2800 A. Typical saturation voltages are 1.75 V at Tvj = 25°C, 2.05 V at 125°C, and 2.50 V at 150°C. The module includes an integrated NTC thermistor with a rated resistance of 5.0 kΩ at 25°C. It operates within a junction temperature range of -40°C to 150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure that any additional characters in the part number correspond to verified packaging or variant specifications rather than assumed functional differences. Cross-reference the manufacturer's latest datasheet revision to confirm active status and compliance requirements before finalizing procurement orders.
Select this component for applications requiring high surge current tolerance and robust short-circuit withstand capability. The positive temperature coefficient of the saturation voltage supports reliable parallel operation in high-current configurations. Verify that the system design accommodates the specified gate-emitter peak voltage limits and utilizes appropriate gate resistors to manage switching losses effectively.
This module belongs to the PrimePACK3 series from Infineon Technologies, designed for industrial and renewable energy applications. It integrates Trench/Fieldstop IGBT4 technology with an emitter-controlled diode to optimize switching performance. The package provides high insulation strength and creepage distances suitable for demanding electrical environments.
Consult official Infineon substitution guides for compatible alternatives. Verify pinout compatibility and thermal resistance characteristics when considering cross-references.