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Product Detailed Parameters
- Description：IGBT MOD 1200V 225A 780W
- Series：C
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：Single Chopper
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 150A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：225 A
- Power - Max：780 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：11 nF @ 25 V
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Overview
The FF150R12KT3GHOSA1 is a dual IGBT module from Infineon's Trench/Fieldstop IGBT3 series, housed in a 62 mm C-series package. It features an Emitter Controlled High Efficiency diode and screw-mount terminals. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V, a continuous DC collector current (IC) of 225 A at 25°C, and a total power dissipation (Ptot) of 780 W. The module operates within a junction temperature range of -40°C to 125°C.
Feature Summary
- Utilizes fast Trench/Fieldstop IGBT3 technology for efficient switching performance.
- Incorporates an Emitter Controlled High Efficiency diode to optimize reverse recovery characteristics.
- Designed with low stray inductance for high reliability in inverter applications.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Medium-power inverters
Procurement Notes
Verify the specific suffix GHOSA1 against official documentation to confirm material content or compliance variations. Confirm availability status as this component may be subject to lifecycle changes. Ensure sourcing channels provide valid traceability certificates and original manufacturer packaging upon delivery.
Selection Notes
Select this module for designs requiring robust 1200 V blocking capability and high current handling up to 225 A. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure gate drive circuits support the recommended ±15 V operating voltage for optimal switching performance.
Part Context
This part belongs to the Infineon 62 mm C-series module family, designed for industrial power electronics. It represents the Trench/Fieldstop IGBT3 generation, offering improved efficiency over previous technologies. The module integrates both N-channel IGBTs and anti-parallel diodes in a single flange-mount housing.
Replacement Considerations
Consult official replacement guides for cross-references. Verify pinout compatibility and thermal interface dimensions before substitution. Check datasheet updates for any functional differences in newer generations.
