FF150R17KE4HOSA1

FF150R17KE4HOSA1

$82.47
  • Description:MODULE IGBT 1700V AG-62MM-1
  • Series:C

SKU:389d8fd9d995 Category: Brand:

  
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Product Detailed Parameters

  • Description:MODULE IGBT 1700V AG-62MM-1
  • Series:C
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:2 Independent
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 150A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):150 A
  • Power - Max:-
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:12 nF @ 25 V

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FF150R17KE4HOSA1

Overview

The FF150R17KE4HOSA1 is a dual IGBT module from Infineon Technologies, utilizing silicon technology and belonging to the Trenchstop IGBT4 - E4 series. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 310 A at 25°C. The device has a typical collector-emitter saturation voltage of 2.3 V and a power dissipation rating of 1.25 kW. Designed for screw mounting, it operates within a temperature range of -40°C to +150°C.

Feature Summary

  • Dual configuration integrating two independent IGBTs within a single package.
  • Trenchstop IGBT4 technology providing optimized switching performance.
  • Robust thermal management capabilities with high power dissipation ratings.

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Induction heating systems

Procurement Notes

Verify the complete part number including the HOSA1 suffix against official Infineon documentation to ensure correct component identification. Confirm RoHS compliance status through the manufacturer's datasheet or material content declaration before procurement.

Selection Notes

Select this module for applications requiring a 1.7 kV voltage rating and dual topology. Ensure the cooling system supports the specified 1.25 kW power dissipation. Verify that the gate drive circuitry accommodates the required electrical characteristics for reliable operation.

Part Context

This component belongs to the FFXR17K4H series of IGBT modules. It shares the same physical footprint and general specifications as the FF200R17KE4HOSA1, differing primarily in current handling capacity. Both utilize the standard 62 mm module package design common to this product family.

Replacement Considerations

The FF200R17KE4HOSA1 serves as a verified substitute part number for this component. Cross-referencing should be performed using official Infineon documentation to confirm functional compatibility.

FF150R17KE4HOSA1FF150R17KE4HOSA1
$82.47
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