SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF150R17KE4HOSA1 is a dual IGBT module from Infineon Technologies, utilizing silicon technology and belonging to the Trenchstop IGBT4 - E4 series. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 310 A at 25°C. The device has a typical collector-emitter saturation voltage of 2.3 V and a power dissipation rating of 1.25 kW. Designed for screw mounting, it operates within a temperature range of -40°C to +150°C.
Verify the complete part number including the HOSA1 suffix against official Infineon documentation to ensure correct component identification. Confirm RoHS compliance status through the manufacturer's datasheet or material content declaration before procurement.
Select this module for applications requiring a 1.7 kV voltage rating and dual topology. Ensure the cooling system supports the specified 1.25 kW power dissipation. Verify that the gate drive circuitry accommodates the required electrical characteristics for reliable operation.
This component belongs to the FFXR17K4H series of IGBT modules. It shares the same physical footprint and general specifications as the FF200R17KE4HOSA1, differing primarily in current handling capacity. Both utilize the standard 62 mm module package design common to this product family.
The FF200R17KE4HOSA1 serves as a verified substitute part number for this component. Cross-referencing should be performed using official Infineon documentation to confirm functional compatibility.