Single FETs, MOSFETs FF17900J-7 product image

FF17900J-7

$3.95
  • Description:SICFET N-CH 1700V 4.5A TO-263-7L
  • Series:Falcon
  • Mfr:fastSiC
  • Package:Tape & Reel (TR)

SKU:ffaf42f703c4 Category: Brand:

  
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FF17900J-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists fastSiC. Its product description is SICFET N-CH 1700V 4.5A TO-263-7L. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FF17900J-7

  • Description:SICFET N-CH 1700V 4.5A TO-263-7L
  • Series:Falcon
  • Mfr:fastSiC
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1700 V
  • Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):18V
  • Rds On (Max) @ Id, Vgs:1.5Ohm @ 500mA, 18V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:19 nC @ 15 V
  • Vgs (Max):18V
  • Input Capacitance (Ciss) (Max) @ Vds:266 pF @ 1.2 kV
  • FET Feature:-
  • Power Dissipation (Max):83W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK-7L
  • Package / Case:TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Single FETs, MOSFETs datasheet and documents for FF17900J-7

FF17900J-7

Single FETs, MOSFETs Overview

The FF17900J-7 is a Silicon Carbide MOSFET from the Falcon Series, rated for a drain-source voltage of 1700V and a maximum junction temperature of 175°C. It features a TO-263-7L package with a typical on-state resistance of 900 mΩ at VGS=18V and ID=0.5A. The device supports a continuous drain current of 4.5A and a pulse drain current of 12A, with a total power dissipation of 83W. Key electrical parameters include a gate charge of 19 nC, output capacitive charge of 16.5 nC, and an avalanche energy rating of 32 mJ.

Single FETs, MOSFETs Feature Summary

  • Optimized for high-voltage applications with strong latch-up hardness
  • High avalanche endurance capability for robust operation
  • Low capacitance characteristics enabling rapid switching behavior
  • RoHS compliant and halogen-free construction

Single FETs, MOSFETs Applications

  • Switching mode power supplies
  • Pulsed power applications
  • Battery management systems
  • Telecom power systems
  • Renewable energy systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'J-7' against the manufacturer's official documentation to confirm the exact package variant and marking. Ensure that the procurement channel provides valid traceability for automotive or industrial grade requirements if applicable. Confirm compliance with RoHS and halogen-free standards as stated in the datasheet before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high blocking voltage and low leakage current. Consider the thermal impedance and derating curves when determining heat sink requirements for continuous operation. Verify that the recommended gate-source turn-on voltage range of 15V to 18V aligns with the driver circuit capabilities to ensure optimal performance and reliability.

Single FETs, MOSFETs Part Context

This part belongs to the Falcon Series of Silicon Carbide MOSFETs manufactured by Fast SiC Semiconductor Inc. The series focuses on high-efficiency power conversion solutions utilizing silicon carbide technology. The FF17900 model specifically targets applications demanding high voltage handling and compact system designs.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's website for comparable products. No specific substitute part numbers are documented in the provided datasheet.

FF17900J-7FF17900J-7
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