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FF17MR12W1M1HB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 1200V AG-EASY1B. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF17MR12W1M1HB11BPSA1
- Description：MOSFET 1200V AG-EASY1B
- Series：CoolSiC™
- Mfr：Infineon Technologies
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-EASY1B
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF17MR12W1M1HB11BPSA1
FET, MOSFET Arrays Overview
The FF17MR12W1M1HB11BPSA1 is a CoolSiC Trench MOSFET half-bridge module rated at 1200 V. It features PressFIT contact technology and an integrated NTC temperature sensor. The continuous DC drain current is 50 A at 175 °C, with a repetitive peak current of 100 A. Key electrical parameters include a maximum on-resistance of 34.7 mΩ at 175 °C, a gate threshold voltage of 3.45 to 5.15 V, and a total gate charge of 0.149 µC. The module exhibits low stray inductance of 9 nH and thermal resistance from junction to heat sink of 0.8 K/W.
FET, MOSFET Arrays Feature Summary
- Utilizes CoolSiC Trench MOSFET technology for high-frequency switching applications.
- Incorporates PressFIT contact technology for rugged mounting without soldering.
- Features an integrated NTC thermistor for precise temperature monitoring.
- Designed with low inductive structure to minimize switching losses.
FET, MOSFET Arrays Applications
- High-frequency switching applications
- DC/DC converters
- Uninterruptible Power Supply (UPS) systems
- Electric vehicle (EV) DC chargers
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm mechanical and electrical configurations. Ensure compatibility with the EasyDUAL module series specifications. Confirm that the component meets industrial application validation standards as defined in relevant IEC norms before integration into final designs.
FET, MOSFET Arrays Selection Notes
Select this module for designs requiring high efficiency and compact form factors in power conversion circuits. Consider the 1200 V rating and 50 A continuous current capability when sizing thermal management solutions. Evaluate the low stray inductance benefits for high-speed switching topologies and ensure gate drive voltages align with the recommended operating range.
FET, MOSFET Arrays Part Context
This component belongs to the Infineon EasyDUAL product family, which integrates CoolSiC MOSFETs in a standardized module format. The M1H series designation indicates the specific generation of trench MOSFET technology used within the package. The B11 suffix typically denotes specific terminal and labeling configurations within the EasyDUAL lineup.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon cross-reference documents for verified substitute part numbers. Do not assume functional equivalence with other SiC modules based solely on voltage and current ratings. Verify pinout compatibility and thermal characteristics before substituting.
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