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FF17MR12W1M1HPB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 1200V AG-EASY1B. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF17MR12W1M1HPB11BPSA1
- Description：MOSFET 1200V AG-EASY1B
- Series：CoolSiC™
- Mfr：Infineon Technologies
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-EASY1B
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF17MR12W1M1HPB11BPSA1
FET, MOSFET Arrays Overview
The FF17MR12W1M1HPB11BPSA1 is a half-bridge module featuring CoolSiC Trench MOSFET technology with a 1200 V drain-source voltage rating. It supports a continuous DC drain current of 50 A and a repetitive peak current of 100 A at 175 °C junction temperature. The device incorporates PressFIT contact technology, an integrated NTC thermistor (5 kΩ at 25 °C), and pre-applied thermal interface material. Key electrical parameters include a maximum on-resistance of 34.7 mΩ at 175 °C and a stray inductance of 9 nH.
FET, MOSFET Arrays Feature Summary
- Utilizes low-inductive design to minimize switching losses
- Features rugged mounting via integrated clamps and PressFIT contacts
- Includes an integrated NTC temperature sensor for thermal monitoring
FET, MOSFET Arrays Applications
- High-frequency switching applications
- DC/DC converters
- UPS systems
- EV DC chargers
FET, MOSFET Arrays Procurement Notes
Verify the component against the official Infineon datasheet IFX-ABF197-003. Confirm that the ordering suffix B11 corresponds to the specific package variant containing PressFIT contacts and the integrated NTC sensor. Ensure compliance with IEC standards for industrial application validation before procurement.
FET, MOSFET Arrays Selection Notes
Select this module for designs requiring high-frequency operation and robust mechanical integration. The low stray inductance of 9 nH makes it suitable for minimizing voltage overshoot. Verify gate drive requirements against the recommended -5 to 0 V off-state and 15 to 18 V on-state voltages to ensure optimal performance and longevity.
FET, MOSFET Arrays Part Context
This component belongs to the EasyDUAL series from Infineon Technologies. It integrates CoolSiC Trench MOSFETs into a compact power module designed for industrial environments. The product is qualified according to IEC 60747, 60749, and 60068 standards, ensuring reliability for demanding power conversion tasks.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FET, MOSFET Arrays FAQ
What is the isolation test voltage of the module?
The isolation test voltage is 3.0 kV RMS at 50 Hz for 1 minute.
Does the module include thermal management features?
Yes, it includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C and comes with pre-applied thermal interface material.
What is the maximum baseplate operation temperature?
The maximum baseplate operation temperature is 125 °C.
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