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The FF1800R12IE5PBPSA1 is a PrimePACK™3+ B-series IGBT module featuring Trench/Fieldstop IGBT5 technology and an Emitter Controlled 5 diode. It has a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (ICDC) of 1800 A at TC = 95°C. The repetitive peak collector current (ICRM) is 3600 A. The collector-emitter saturation voltage (VCEsat) is typically 1.70 V at Tvj = 25°C. The module includes an NTC thermistor with a rated resistance (R25) of 5.00 kΩ. Operating junction temperature ranges from -40°C to 175°C. The package dimensions are 250 mm x 89 mm, and the isolation test voltage is 4.0 kV RMS.
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure compatibility with mounting torque specifications and thermal interface material requirements during integration. Cross-reference datasheet version V3.1 for accurate electrical parameters and mechanical outlines before finalizing procurement orders.
Select this module for high-power industrial applications requiring 1200 V blocking capability and 1800 A continuous current handling. Consider the 175°C maximum junction temperature rating for thermal management design. Verify that the gate drive circuitry supports the specified internal gate resistor and charge characteristics for optimal switching performance in inverter topologies.
This component belongs to the Infineon Trenchstop IGBT5 - E5 series within the PrimePACK™3+ family. It utilizes silicon technology designed for industrial quality grades. The module integrates both IGBT and diode chips in a half-bridge configuration, optimized for high power density and thermal cycling capability in demanding power electronics environments.
FF1800R12IE5P