FF1MR12MM1HWB11BPSA1

$578.39

Description：MEDIUM POWER ECONO
Series：-

SKU:2e6bfd72329e Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FF1MR12MM1HWB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MEDIUM POWER ECONO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF1MR12MM1HWB11BPSA1

Description：MEDIUM POWER ECONO
Series：-
Mfr：Infineon Technologies
Package：Tray
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF1MR12MM1HWB11BPSA1

FF1MR12MM1HWB11BPSA1

FET, MOSFET Arrays Overview

The FF1MR12MM1HWB11BPSA1 is a CoolSiC Trench MOSFET module in the EconoDUAL 3 housing. It features a 1200 V drain-source voltage and a continuous DC current of 420 A at 175 °C junction temperature, with a repetitive peak current of 1000 A. The on-resistance is 1.91 mΩ max at 25 °C. It includes an integrated NTC thermistor (5 kΩ at 25 °C) and utilizes PressFIT contact technology with an isolated copper base plate.

FET, MOSFET Arrays Feature Summary

Utilizes CoolSiC Trench MOSFET technology for high power density
Incorporates PressFIT contact technology for reliable terminal connection
Features an integrated NTC thermistor for precise temperature monitoring
Provides an isolated base plate for enhanced electrical safety

FET, MOSFET Arrays Applications

Construction, commercial, and agriculture vehicles
Wind turbines
Motor drives
UPS systems
Solar applications

FET, MOSFET Arrays Procurement Notes

Verify that the specific ordering suffix matches the required configuration, as variations exist within the product family. Confirm compliance with industrial qualification standards IEC 60747, 60749, and 60068. Ensure gate drivers are selected according to official Infineon guidelines to guarantee proper operation and long-term reliability of the device.

FET, MOSFET Arrays Selection Notes

Select this component for high-power applications requiring robust thermal management and fast switching capabilities. The 1200 V rating supports various medium-voltage topologies. Consider the 175 °C operating temperature range for demanding environments. Verify mechanical fit within the standard EconoDUAL 3 footprint and ensure appropriate heatsinking for the specified thermal resistance values.

FET, MOSFET Arrays Part Context

This module belongs to the Infineon EconoDUAL 3 series, designed for industrial power electronics. It integrates silicon carbide semiconductors into a standardized package, facilitating easy integration into existing designs. The series is recognized for its high efficiency and compact form factor, suitable for modern energy conversion systems.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon documentation for qualified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions. Verify thermal characteristics and pinout compatibility before implementation.