FF200R06KE3HOSA1

Overview

The FF200R06KE3HOSA1 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT3 and Emitter Controlled3 diode technology. It provides a collector-emitter voltage of 600 V, with continuous DC collector currents of 200 A at TC=80°C and 260 A at TC=25°C. The total power dissipation reaches 680 W at TC=25°C. Key electrical parameters include a maximum repetitive peak collector current of 400 A, a gate-emitter peak voltage of +/-20 V, and an internal gate resistance of 1.0 Ω. Thermal characteristics specify a junction-to-case thermal resistance of 0.22 K/W for the IGBT and 0.42 K/W for the diode.

Feature Summary

• Incorporates Trench/Fieldstop IGBT3 technology combined with Emitter Controlled3 diodes to optimize switching performance and conduction losses.
• Features a robust 62mm C-Series module design with a copper baseplate and Al2O3 internal insulation for high power density.
• Provides high short-circuit capability with defined safe operating limits under specified pulse durations.

Applications

• High-power converters
• Motor drives
• UPS systems

Procurement Notes

Verify the specific HOSA1 suffix against official Infineon documentation to confirm compliance requirements or material composition differences compared to the standard part number. Ensure that the ordering information matches the exact revision level required for your manufacturing process. Cross-reference the datasheet revision date to validate technical specifications before finalizing procurement orders.

Selection Notes

Select this component based on its 600 V rating and 260 A continuous current capacity at 25°C case temperature. Evaluate the thermal resistance values (0.22 K/W for IGBT, 0.42 K/W for Diode) against your heatsinking strategy. Consider the 62mm form factor for mechanical compatibility and verify that the gate drive circuitry supports the specified 15 V operating levels and internal gate resistance.

Part Context

This module belongs to the Infineon 62mm C-Series, utilizing IGBT3 technology. It is designed as a half-bridge configuration within a standardized industrial package. The series integrates trench fieldstop IGBTs with emitter controlled diodes to balance efficiency and robustness for demanding power electronics applications.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Direct replacements must match the 62mm footprint, 600 V rating, and similar current capabilities. Verify pinout compatibility and thermal interface requirements before substituting.