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Product Detailed Parameters
- Description：IGBT MOD 1200V 275A 1400W
- Series：C
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：275 A
- Power - Max：1400 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：13 nF @ 25 V
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Overview
The FF200R12KS4HOSA1 is a half-bridge IGBT module from the 62mm C-Series, utilizing fast IGBT2 technology for high-frequency switching. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 200 A at TC = 65°C, with a repetitive peak collector current (ICRM) of 400 A. The module includes an integrated anti-parallel diode with a forward current (IF) of 200 A. Key electrical parameters include a typical VCEsat of 3.20 V and VF of 2.00 V at Tvj = 25°C. Thermal resistance from junction to case is 0.09 K/W per IGBT and 0.18 K/W per diode. The package has an isolated copper base plate with a CTI > 400.
Feature Summary
- High short-circuit capability with self-limiting short-circuit current
- Low switching losses due to fast IGBT2 chip technology
- VCEsat with positive temperature coefficient
- Isolated copper base plate with high creepage and clearance distances
Applications
- High frequency switching applications
- Medical applications
- Motor drives
- Resonant inverter applications
- Servo drives
- UPS systems
Procurement Notes
Verify the specific ordering suffix HOSA1 against official Infineon documentation to confirm compliance details and material content. Ensure that the procurement channel provides valid traceability data matching the module label code requirements. Cross-reference the production datecode on the physical unit with the datasheet specifications to confirm operational suitability.
Selection Notes
Select this module for designs requiring robust performance in high-frequency environments. The 62mm form factor supports up to 200 A continuous current. Consider the thermal resistance values when designing heatsink solutions. Verify gate drive requirements against the specified VGE thresholds and internal gate resistor values for optimal switching performance.
Part Context
This component belongs to the Infineon 62mm C-Series, designed specifically for high-frequency switching applications using second-generation fast IGBT technology. It is part of a broader family of modules offering various voltage and current ratings within the same mechanical footprint, facilitating design flexibility across different power levels.
Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Generic cross-references may not match the specific IGBT2 technology characteristics or thermal properties.
