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Product Detailed Parameters
- Description：IGBT MODULE 1200V 1050W
- Series：EconoDUAL™ 2
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 200A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Power - Max：1050 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
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Overview
The FF200R12MT4BOMA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features an isolated base plate and integrated NTC thermistor. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V, continuous DC collector current (IC nom) of 200 A at TC=100°C, and repetitive peak collector current (ICRM) of 400 A. The typical collector-emitter saturation voltage (VCEsat) is 2.05 V at Tvj=125°C. Total power dissipation is 1050 W at TC=25°C. Thermal resistance from junction to case is 0.14 K/W per IGBT and 0.25 K/W per diode.
Feature Summary
- Fast Trench/Fieldstop IGBT4 technology with low switching losses
- Emitter Controlled 4 Diode for optimized reverse recovery characteristics
- Integrated NTC thermistor for precise temperature monitoring
- Isolated copper base plate for enhanced thermal management
Applications
- Motor drives
- UPS systems
Procurement Notes
Verify the specific ordering suffix BOMA1 against official documentation to confirm exact configuration details. Ensure compatibility with standard EconoDUAL™2 mounting requirements. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring high current density and extended operation temperatures up to 150°C. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Evaluate thermal resistance values against heatsink capabilities to ensure safe operating area limits are maintained under maximum load conditions.
Part Context
This module belongs to the EconoDUAL™2 series, designed for industrial and traction applications. It integrates fast IGBT chips with emitter-controlled diodes in a robust standard housing. The design emphasizes high reliability and low switching costs within a compact footprint suitable for various power conversion topologies.
Replacement Considerations
Check for updated revisions within the FF200R12MT4 family. Verify pinout and thermal interface dimensions against alternative modules. Confirm that substitute components offer equivalent short-circuit withstand capability and gate threshold voltage ranges.
