SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF200R17KE3S4HOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trenchstop IGBT4 technology. It features a collector-emitter voltage of 1700 V and a nominal continuous DC collector current of 200 A at 100°C case temperature. The device has a maximum repetitive peak collector current of 400 A and a total power dissipation of 1250 W. Key electrical parameters include a typical VCEsat of 1.95 V at 25°C and a forward voltage of 1.80 V for the integrated diode. Operating junction temperatures range from -40°C to 150°C.
Verify the exact ordering suffix against official manufacturer documentation to confirm specific packaging or testing variations. Ensure compatibility with standard mounting hardware and thermal interface materials specified in the application notes. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement orders.
Select this module for applications requiring high voltage blocking capability and moderate switching speeds. Evaluate thermal resistance values carefully to ensure adequate heatsinking for the intended power dissipation levels. Consider the gate charge and internal gate resistor when designing the driver circuitry for optimal switching performance.
This component belongs to the 62mm C-Series module family from Infineon. It utilizes silicon technology and is designed for industrial power electronics applications. The module integrates both IGBT and diode chips within a single standardized housing to simplify assembly and improve system reliability.
Check for direct substitutes within the same 62mm form factor series. Verify pinout compatibility and thermal resistance specifications before substituting. Consult official replacement guides for any updated generations with improved electrical characteristics.