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FF23MR12W1M1B11BOMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V 50A MODULE. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF23MR12W1M1B11BOMA1
- Description：MOSFET 2N-CH 1200V 50A MODULE
- Series：CoolSiC™+
- Mfr：Infineon Technologies
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：50A
- Rds On (Max) @ Id, Vgs：23mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id：5.55V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs：125nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：3950pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF23MR12W1M1B11BOMA1
FET, MOSFET Arrays Overview
The FF23MR12W1M1B11BOMA1 is a CoolSiC MOSFET module manufactured by Infineon Technologies. It features an N-channel configuration with a drain-source voltage of 1.2 kV and a continuous drain current of 50 A. The device exhibits a maximum on-resistance of 23 mΩ at 25°C. It operates within a temperature range of -40°C to +150°C junction temperature. The gate-source voltage limits are specified as -10 V to +20 V, with a threshold voltage of 3.5 V. The module utilizes press-fit installation and belongs to the Easy1B-2 package series.
FET, MOSFET Arrays Feature Summary
- Utilizes silicon carbide (SiC) technology for high-performance power switching.
- Designed with a dual N-channel configuration for bridge applications.
- Incorporates press-fit mounting for secure mechanical connection.
FET, MOSFET Arrays Applications
- Industrial motor drives
- Uninterruptible power supplies
- Solar inverters
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific part number matches the required electrical specifications and package type. Check for end-of-life status or discontinuation notices prior to finalizing procurement decisions. Ensure compliance with RoHS directives and relevant industrial standards.
FET, MOSFET Arrays Selection Notes
Select this module based on its 1.2 kV rating and 50 A current capacity for medium-power applications. Consider the 23 mΩ on-resistance for thermal management requirements. Verify compatibility with existing press-fit assembly processes. Evaluate the operating temperature range against the intended environmental conditions.
FET, MOSFET Arrays Part Context
This component is part of Infineon's CoolSiC portfolio, specifically designed for efficient power conversion. It integrates advanced silicon carbide MOSFET technology into a standardized Easy1B-2 module format. The design supports high-frequency switching operations while maintaining robust reliability in demanding industrial environments.
FET, MOSFET Arrays Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Infineon technical support for qualified alternatives if this specific model is discontinued or unavailable.
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